High-Pressure High-Temperature Synthesis of Nanostructural Magnesium Diboride for Electromotors and Devices Working at Liquid Hydrogen Temperatures

2006 ◽  
Vol 47 ◽  
pp. 25-30 ◽  
Author(s):  
Tatiana Prikhna ◽  
Wolfgang Gawalek ◽  
Yaroslav Savchuk ◽  
Nina Sergienko ◽  
Viktor Moshchil ◽  
...  

Addition of Ti and Zr to high-pressure (HP) synthesized MgB2 results in an increase of critical current density of the material due to the absorption of impurity hydrogen coming most likely from the materials of a high-pressure cell. The results of the studies of structure, critical current density, trapped field and mechanical characteristics are discussed. High-pressure synthesized MgB2 (with Ti additions) blocks were for the first time used in a SC electromotor at 20 K and demonstrated the efficiency similar to that of MT-YBCO bulk (at the same working temperature).

2017 ◽  
Vol 19 (2) ◽  
pp. 177 ◽  
Author(s):  
S. Tolendiuly ◽  
S. M. Fomenko ◽  
G. C. Dannangoda ◽  
K. S. Martirosyan

<p>Magnesium diboride can be synthesized under argon ambient, elevated or high pressures. High-pressure syntheses are promising methods for manufacturing of the bulk MgB<sub>2</sub> superconductor material. We have been used high pressure of Ar gas in order to investigate its effect on properties of MgB<sub>2</sub> superconductor such as critical temperature and current density. Bulk MgB<sub>2</sub> superconductor was synthesized from elemental Mg–B powders in thermal explosion mode of self-propagating high-temperature synthesis (SHS) under argon pressure of 25 atm. XRD pattern of the as-synthesized product indicates an almost complete conversion of the reactants to the MgB<sub>2</sub> single phase. Most of the diffractions peaks are related to the MgB<sub>2</sub> polycrystalline bulk material. The impurity fraction is less than 24.3% in total sample and identified as MgO and MgB<sub>4</sub> secondary phases. The positive effect of pressure of Ar gas during synthesis of MgB2 on critical current density JC has been confirmed. The critical current density of the sample was achieved in high pressure reactor was 3.8×10<sup>6</sup> A/cm<sup>2</sup>. A superconducting volume fraction of 16% under a magnetic field of 10 Oe was obtained at 5 K, indicating that the superconductivity was bulk in nature. The succeeded level of superconductor parameters of the high-pressure synthesized MgB<sub>2</sub> and the possibility to produce a large bulk products make this technology very promising for practical applications.</p>


2020 ◽  
Vol 33 (6) ◽  
pp. 065001 ◽  
Author(s):  
Sunseng Pyon ◽  
Daisuke Miyawaki ◽  
Tsuyoshi Tamegai ◽  
Satoshi Awaji ◽  
Hijiri Kito ◽  
...  

2017 ◽  
Vol 891 ◽  
pp. 483-488 ◽  
Author(s):  
Daniela Volochová ◽  
Vitaliy Antal ◽  
Jozef Kováč ◽  
Pavel Diko

The influence of Sm addition on the microstructure and superconducting properties of Y-Ba-Cu-O (YBCO) bulk superconductors has been studied. Precursor powders YBa2Cu3O7-δ (Y-123), Y2O3 and CeO2 were enriched with different amounts of SmBa2Cu3Oy (Sm-123) or Sm2O3 powders with the aim to increase critical current density, Jc,by introducing additional pinning centers. YBCO bulk superconductors with SmBa2Cu3Oy (Y123-Sm) or Sm2O3 (Y123-SmO) powder addition were prepared by the optimized top seeded melt growth process in the form of single grains. Microstructure analysis revealed that Sm2O3 addition leads to a higher amount of smaller Y2BaCuO5 (Y-211) particles, what is related to high critical current densities (Jc ~ 7 x 104 A/cm2) of the YBCO samples with Sm2O3 addition in low magnetic fields. The effect of Sm addition in the form of SmBa2Cu3Oy as well as Sm2O3 powder on Y2BaCuO5 particle size, critical temperature, Tc, and critical current density, Jc, is reported.


2014 ◽  
Vol 504 ◽  
pp. 69-72 ◽  
Author(s):  
Sunseng Pyon ◽  
Yuji Tsuchiya ◽  
Hiroshi Inoue ◽  
Norikiyo Koizumi ◽  
Hideki Kajitani ◽  
...  

2014 ◽  
Vol 504 ◽  
pp. 73-76 ◽  
Author(s):  
Hiroshi Inoue ◽  
Yuji Tsuchiya ◽  
Shinya Tada ◽  
Sunseng Pyon ◽  
Hideki Kajitani ◽  
...  

1992 ◽  
Vol 275 ◽  
Author(s):  
D. Andreone ◽  
R. Cherubini ◽  
S. Colombo ◽  
R. Gerbaldo ◽  
E. Mezzetti ◽  
...  

ABSTRACTIn this work the possibility of enhancing the critical current density in proton implanted surface layers on YBCO bulk is discussed. A complete transport characterization shows that, for what concerns two samples from different irradiation runs, the critical current density has been enhanced. Increases of other meaningful parameters, such as average pinning energy and vortex-antivortex coupling strength, have also been found, although the relative effect of the implanted layer on the whole specimen cannot be evaluated in a fully quantitative way.


2002 ◽  
Vol 17 (3) ◽  
pp. 525-527 ◽  
Author(s):  
C-Q. Jin ◽  
S-C. Li ◽  
J-L. Zhu ◽  
F-Y. Li ◽  
Z-X. Liu ◽  
...  

We report the property studies of a MgB2 superconductor with high critical current density. The MgB2 superconductor was readily fabricated through a direct high-pressure synthesis of the respective elements. The obtained high-density MgB2 undergoes a sharp superconducting transition at 39 K. The bulk critical current density (Jc) of the sample was calculated on the basis of Bean's critical state model, and rather high critical current densities over a wide temperature range were obtained in comparison with the ambient prepared samples. The results highlight that high-pressure sintering would be a promising way to produce and search for this kind of intermetallic boride and the related superconductors.


2016 ◽  
Vol 8 (4) ◽  
pp. 11
Author(s):  
Jack Jia-Sheng Huang ◽  
Yu-Heng Jan

<p class="1Body">Critical current density on the electromigration failure is a commonly observed phenomenon in the integrated circuit (IC) interconnect. The critical current density is important for the lognormal distribution and failure time extrapolation of IC metal conductors. In this paper, we report the critical current density (j<sub>c</sub>) of semiconductor laser degradation for the first time. Despite of the different physical origin, the j<sub>c</sub> of the laser degradation exhibits similar effect on the failure time distribution. We develop a new kinetic defect diffusion model that can account for the existence of j<sub>c</sub>. We discuss the physical mechanism and its implication in the reliability extrapolation of diode lasers.</p>


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