Fabrication and Magneto-Transport Properties of Zn0.88-xMgxMn0.12O/ZnO Heterostructures Grown on ZnO Single-Crystal Substrates

The transport properties of Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructures (x≤0.15) were investigated. The heterostructures were fabricated on ZnO single-crystal substrates by a pulsed laser deposition system. Atomic force microscope observation and X-ray diffraction analysis suggested that Zn0.88-xMgxMn0.12O layers have atomically flat surface and excellent crystallinity. The results of Hall measurement for Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructure with x=0.075 revealed that the carrier concentration and the electron mobility were 5.1×1012cm-2 and 800 cm2/Vs at 10 K, respectively, suggesting that the carrier confinement effect exits at the heterointerface between Zn0.88-xMgxMn0.12O barrier layer and ZnO channel layer. In the magnetoresistance (MR) measurement at 1.85 K, a positive MR behavior was observed below 0.5 T, while a negative MR behavior was recognized above 0.5 T. The slope of the positive MR decreased with increasing the temperature and was well fitted to the Brillouin function with S=5/2. The electrical and magneto-transport properties were very similar to those of Zn0.88Mn0.12O/ZnO heterostructures without doping Mg.

Download Full-text

Hydrogen-Induced Defects of Subsurface Layer in ZnO Single Crystal Probed by a Slow Positron Beam

Materials Science Forum ◽

10.4028/www.scientific.net/msf.733.232 ◽

2012 ◽

Vol 733 ◽

pp. 232-235 ◽

Cited By ~ 1

Author(s):

X.D. Xue ◽

T. Wang ◽

J. Jiang ◽

P.H. Li ◽

Y.F. Liu ◽

...

Keyword(s):

Single Crystal ◽

Subsurface Layer ◽

Positron Beam ◽

X Ray Diffraction ◽

Slow Positron ◽

X Ray ◽

S Parameter ◽

Induced Defects ◽

Zno Single Crystal ◽

Deformation Layer

Hydrogen-induced defects of ZnO single crystals electrochemically charged with hydrogen have been investigated by positron beam-based Doppler broadening spectroscopy, X-ray diffraction (XRD) and optical microscopy (OM). XRD and OM results indicated that a deformation layer was formed due to hydrogen-induced structural change at the subsurface of ZnO single crystal. Slow positron beam measurements showed that this deformation layer contained many defects, such as dislocations and Zn vacancies, which led to increase of S parameter.

Download Full-text

DC Magnetron Sputtering of B2 Phase Feal(111) Single-Crystal-Like Films and Hydrogen Damage Behavior

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.853.131 ◽

2013 ◽

Vol 853 ◽

pp. 131-134

Author(s):

Tao Tang ◽

Yi Liu ◽

Qun Li ◽

Jiang Li Cao ◽

Yu Zhe Liu ◽

...

Keyword(s):

Magnetron Sputtering ◽

Single Crystal ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Tem Analysis ◽

X Ray ◽

Hydrogen Damage ◽

Atomic Force ◽

Transmission Electron ◽

B2 Phase

B2 ordered FeAl intermetallic is an important candidate for high-temperaturestructural materials, and its hydrogen embrittlement problem has attracted wide attentions in recent decades. In this paper, we prepared single-crystal-like B2-FeAl (111) thin films on Si (111) substrate using the conventional magnetron sputtering method, and studied the phase composition and the influences of hydrogen on FeAl (111) films by X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscope (AFM) and transmission electron microscope (TEM) analysis. The preffered growth mechanism of FeAl (111) film and its hydrogen induced modification were discussed.

Download Full-text

Fabrication,Transport and Raman Studies of Pulsed Laser Deposited Al/Ga Doped PBCO Thin Films

MRS Proceedings ◽

10.1557/proc-1222-dd02-09 ◽

2009 ◽

Vol 1222 ◽

Author(s):

Hom R Kandel ◽

Tar-Pin Chen ◽

Hye-Won Seo ◽

Milko Iliev ◽

Paritosh Wadekar ◽

...

Keyword(s):

Thin Films ◽

Single Crystal ◽

Epitaxial Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Micro Raman Spectroscopy ◽

Atomic Force ◽

Second Phases ◽

Krf Excimer Laser

AbstractWe have fabricated highly resistive materials PrBa2 (Cu1-xMx) 3O7 (M=Al, Ga, x = 0.20) by doping metals Ga and Al on PrBa2Cu3O7(PBCO). X-ray data indicated no significant second phases in substituting Cu by Al or Ga up to 20%.The electrical resistivity of these materials were three to four orders in magnitude higher than PBCO at 200K, which may give an effective potential barrier to YBCO in high Tc S-I-S Josephson junction. Epitaxial thin films of these materials were grown using KrF excimer laser on LAO (110) single crystal substrates. X-ray diffraction (XRD) and atomic force microscopy (AFM) were deployed to study the crystal orientation, epitaxy and roughness of the single crystal thin films. Micro Raman spectroscopy was carried out to investigate the dopant site in PBCO.

Download Full-text

Optical and structural characterization of antimony doped ZnO single crystal.

Acta Crystallographica Section A Foundations and Advances ◽

10.1107/s2053273314085829 ◽

2014 ◽

Vol 70 (a1) ◽

pp. C1417-C1417

Author(s):

Gabriel Juarez Diaz ◽

Javier Martinez Juarez ◽

Ramon Peña Sierra ◽

Primavera Lopez Salazar ◽

Jorge Contreras Rascon ◽

...

Keyword(s):

Single Crystal ◽

Structural Modification ◽

Atomic Diffusion ◽

X Ray Diffraction ◽

Reciprocal Space Mapping ◽

X Ray ◽

Radiative Transitions ◽

Zno Single Crystal

We present the optical and structural study of the antimony doped zinc oxide (ZnO) performed by atomic diffusion. Diffusion is carried out at a temperature of 10000C for periods of 1, 2 and 4 hrs from a solid source prepared by partial oxidation of antimony, characterizing each step of the process was performed by photoluminescence (PL) and x-ray diffraction (XRD). The characterization by photoluminescence shows the effect of doping with antimony in radiative transitions caused by the creation of impurity levels. Doped samples were analyzed by high resolution diffraction and reciprocal space mapping which revealed the structural modification of the quality of the single crystal produced by the introduction of antimony. The results indicate that the antimony is introduced fully the volume of ZnO and does not modify the quality of the crystal.

Download Full-text

K-rich rectorite from kaolinized micaschist of the Sesia-Lanzo Zone, Italy

Clay Minerals ◽

10.1180/000985501750539508 ◽

2001 ◽

Vol 36 (3) ◽

pp. 421-433 ◽

Cited By ~ 7

Author(s):

E. Benincasa ◽

M. F. Brigatti ◽

L. Medici ◽

L. Poppi

Keyword(s):

Single Crystal ◽

Exchangeable Cation ◽

X Ray Diffraction ◽

Interlayer Cation ◽

X Ray ◽

Cell Parameters ◽

Force Microscopy ◽

Atomic Force ◽

Layer Stacking ◽

Nw Italy

AbstractRectorite crystals [[4](Si6.81Al1.19)[6](Al3.26Ti0.04Fe0.553+Mg0.18Mn0.01)[12](Na0.02K0.88 Mg0.16Ca0.01)O20(OH)4·0.75H2O] found in micaschist of the Sesia-Lanzo Zone (NW Italy) were studied using a variety of techniques including microprobe analysis, infrared spectroscopy, single crystal and powder X-ray diffraction, atomic force microscopy and thermal analysis. Chemical data and exchangeable cation determination indicate that K+ is the dominant non-exchangeable interlayer cation, and thus is believed to occupy the mica interlayer site; Mg2+ together with small amounts of Ca2+, Na+ and K+ represent the exchangeable cations and can therefore be related to the smectite-like component. The coefficient of variation, CV, of d(00l) values (CVnatural = 0.47; CVglycolated = 0.43) demonstrates the regularity of the mica-smectite interstratification, whereas the unit-cell parameters obtained by single crystal methods suggest different layer-stacking models.

Download Full-text

Electron Microscopy of Shock Loaded Polycrystalline Beryllium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052547 ◽

1974 ◽

Vol 32 ◽

pp. 506-507 ◽

Cited By ~ 1

Author(s):

J. M. Galbraith ◽

L. E. Murr ◽

A. L. Stevens

Keyword(s):

Electron Microscopy ◽

Wave Propagation ◽

Structural Change ◽

Single Crystal ◽

Diffraction Pattern ◽

Shock Loading ◽

Slip Systems ◽

Compression Tests ◽

X Ray Diffraction ◽

X Ray

Uniaxial compression tests and hydrostatic tests at pressures up to 27 kbars have been performed to determine operating slip systems in single crystal and polycrystal1ine beryllium. A recent study has been made of wave propagation in single crystal beryllium by shock loading to selectively activate various slip systems, and this has been followed by a study of wave propagation and spallation in textured, polycrystal1ine beryllium. An alteration in the X-ray diffraction pattern has been noted after shock loading, but this alteration has not yet been correlated with any structural change occurring during shock loading of polycrystal1ine beryllium.This study is being conducted in an effort to characterize the effects of shock loading on textured, polycrystal1ine beryllium. Samples were fabricated from a billet of Kawecki-Berylco hot pressed HP-10 beryllium.

Download Full-text

Crystal structure of an inclusion complex between chiral monoaza-15-crown-5 and S(–)-1-phenyl-ethyl ammonium percholorate

Zeitschrift für Kristallographie - Crystalline Materials ◽

10.1524/zkri.218.5.381.20734 ◽

2003 ◽

Vol 218 (5) ◽

Cited By ~ 5

Author(s):

Süheyla Özbey ◽

F. B. Kaynak ◽

M. Toğrul ◽

N. Demirel ◽

H. Hoşgören

Keyword(s):

Crystal Structure ◽

Inclusion Complex ◽

Single Crystal ◽

X Ray Diffraction ◽

Space Group ◽

X Ray ◽

New Type

AbstractA new type of inclusion complex, S(–)-1 phenyl ethyl ammonium percholorate complex of R-(–)-2-ethyl - N - benzyl - 4, 7, 10, 13 - tetraoxa -1- azacyclopentadecane, has been prepared and studied by NMR, IR and single crystal X-ray diffraction techniques. The compound crystallizes in space group

Download Full-text

IR SPECTROSCOPY AND SINGLE CRYSTAL X-RAY DIFFRACTION STUDY OF 1,2-BIS(2-AMINOPHENOXY)-ETHANE, 1,5-BIS(2-AMINOPHENOXY)-3-OXAPENTANE, AND 1,8-BIS(2-AMINOPHENOXY)-3,6-DIOXAOCTANE

Журнал структурной химии ◽

10.15372/jsc20170106 ◽

2017 ◽

Keyword(s):

Ir Spectroscopy ◽

Single Crystal ◽

Diffraction Study ◽

X Ray Diffraction ◽

X Ray

Download Full-text

Single crystal X-ray diffraction study of 2,4,6-triazidopyridine and its 3,5-dibromosubstituted derivative

Журнал структурной химии ◽

10.15372/jsc20160620 ◽

2016 ◽

Keyword(s):

Single Crystal ◽

Diffraction Study ◽

X Ray Diffraction ◽

X Ray

Download Full-text

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

MRS Proceedings ◽

10.1557/proc-780-y5.5 ◽

2003 ◽

Vol 780 ◽

Author(s):

C. Essary ◽

V. Craciun ◽

J. M. Howard ◽

R. K. Singh

Keyword(s):

Uv Radiation ◽

Photoelectron Spectroscopy ◽

Grazing Angle ◽

X Ray Diffraction ◽

Metal Thin Films ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force ◽

Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Download Full-text