Plasma Polymerization of Hexamethyldisiloxane and Tetraethoxysilane Thin Films for Humidity Sensing Application

2014 ◽  
Vol 354 ◽  
pp. 41-47 ◽  
Author(s):  
N. Guermat ◽  
A. Bellel ◽  
Salah Sahli ◽  
Yvan Segui ◽  
Patrice Raynaud

Humidity sensitive layers elaborated from pure HMDSO and TEOS by PECVD technique have been studied. Humidity sensing properties including impedance relative humidity (RH) and current RH characteristics were investigated. TEOS films show higher sensitivity and excellent linearity over the explored range of humidity (20–95% RH). However, HMDSO films exhibits a small response and recovery of about 8 and 34 s for humidification and desiccation, respectively, in addition to very low hysteresis (2%). Structural analyses of sensitive layers were characterized by Fourier transform infrared spectroscopy (FTIR).

1995 ◽  
Vol 418 ◽  
Author(s):  
David J. Beardall ◽  
Tod R. Botcher ◽  
Charles A. Wight

AbstractThe initial step of the thermal decomposition of NTO (5-nitro-2,4-dihydro-3H-1,2,4- triazol-3-one) is determined by pulsed infrared laser pyrolysis of thin films. Rapid heating of the film and quenching to 77 K allows one to trap the initial decomposition products in the condensed phase and analyze them using transmission Fourier-transform infrared spectroscopy. The initial decomposition product is CO2; NO2 and HONO are not observed. We propose a new mechanism for NTO decomposition in which CO2 is formed.


2020 ◽  
Vol 392 ◽  
pp. 125768 ◽  
Author(s):  
Vikas Kumar ◽  
Vishnu Chauhan ◽  
Jagjeevan Ram ◽  
Rashi Gupta ◽  
Shalendra Kumar ◽  
...  

2014 ◽  
Vol 976 ◽  
pp. 25-29
Author(s):  
Roberto Castillo-Ojeda ◽  
Joel Diaz-Reyes ◽  
Miguel Galván-Arellano ◽  
Ramon Peña-Sierra

We have studied the optical properties of GaAs and AlxGa1-xAs thin films using low-temperature photoluminescence and Fourier transform infrared spectroscopy. The GaAs and its alloys were grown by MOCVD using solid arsenic instead of arsine, as the arsenic precursor. The gallium and aluminium precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Some difficulties for growing AlxGa1-xAs by solid-arsenic-based MOCVD system are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was evaluated by low-temperature photoluminescence. Infrared measurements on the samples allowed the identification of the residual impurities, which are carbon-substitutional, Ga2O3, molecular oxygen, humidity and two unidentified impurities. Samples grown at temperatures lower than 750°C were highly resistive, independently of the ratio V/III used; the samples grown at higher temperatures were n-type, as it was proved by Hall effect measurements.


2011 ◽  
Vol 9 (5) ◽  
pp. 1649-1653 ◽  
Author(s):  
KH. S. Karimov ◽  
M. M. Ahmed ◽  
Z. M. Karieva ◽  
M. Saleem ◽  
A. Mateen ◽  
...  

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