Molecular Dynamics Simulations of Hydrogen Embrittlement of a Single Crystal of Nickel by the Embedded Atom Method

2002 ◽  
Vol 227 ◽  
pp. 125-132
Author(s):  
Xue Jun Xu ◽  
Mao Wen ◽  
Seiji Fukuyama ◽  
Kiyoshi Yokogawa
Keyword(s):  
Molecular Dynamics ◽  
Hydrogen Embrittlement ◽  
Single Crystal ◽  
Molecular Dynamics Simulations ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Dynamics Simulations

Molecular Dynamics Simulation of Sputtering with Mmany-Body Interactions

1988 ◽  
Vol 100 ◽  
Author(s):  
Davy Y. Lo ◽  
Tom A. Tombrello ◽  
Mark H. Shapiro ◽  
Don E. Harrison
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Single Crystal ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Embedded Atom Method ◽  
Many Body ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Small Single Crystal

ABSTRACTMany-body forces obtained by the Embedded-Atom Method (EAM) [41 are incorporated into the description of low energy collisions and surface ejection processes in molecular dynamics simulations of sputtering from metal targets. Bombardments of small, single crystal Cu targets (400–500 atoms) in three different orientations ({100}, {110}, {111}) by 5 keV Ar+ ions have been simulated. The results are compared to simulations using purely pair-wise additive interactions. Significant differences in the spectra of ejected atoms are found.

Study on the structural transition of CoNi nanoclusters using molecular dynamics simulations

2018 ◽  
Vol 32 (11) ◽  
pp. 1850133
Author(s):  
J. H. Xia ◽  
Xue-Mei Gao
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Structural Transition ◽  
Correction Function ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Analysis Technique ◽  
Dynamics Simulations ◽  
Embedded Atom Method Potential ◽  
Pair Analysis

In this work, the segregation and structural transitions of CoNi clusters, between 1500 and 300 K, have been investigated using molecular dynamics simulations with the embedded atom method potential. The radial distribution function was used to analyze the segregation during the cooling processes. It is found that Co atoms segregate to the inside and Ni atoms preferably to the surface during the cooling processes, the Co[Formula: see text]Ni[Formula: see text] cluster becomes a core–shell structure. We discuss the structural transition according to the pair-correction function and pair-analysis technique, and finally the liquid Co[Formula: see text]Ni[Formula: see text] crystallizes into the coexistence of hcp and fcc structure at 300 K. At the same time, it is found that the frozen structure of CoNi cluster is strongly related to the Co concentration.

Cascade Overlap in hcp Zirconium: Defect Accumulation and Microstructure Evolution with Radiation using Molecular Dynamics Simulations

2013 ◽  
Vol 1514 ◽  
pp. 37-42 ◽  
Author(s):  
Prithwish K. Nandi ◽  
Jacob Eapen
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Microstructure Evolution ◽  
Stacking Faults ◽  
Embedded Atom Method ◽  
Shockley Partial Dislocation ◽  
Embedded Atom ◽  
Defect Accumulation ◽  
Dynamics Simulations ◽  
Eam Potential

ABSTRACTMolecular dynamics simulations are performed to investigate the defect accumulation and microstructure evolution in hcp zirconium (Zr) – a material which is widely used as clad for nuclear fuel. Cascades are generated with a 3 keV primary knock-on atom (PKA) using an embedded atom method (EAM) potential with interactions modified for distances shorter than 0.1 Å. With sequential cascade simulations we show the emergence of stacking faults both in the basal and prism planes, and a Shockley partial dislocation on the basal plane.

Atomic Assembly of Thin Film Materials

2007 ◽  
Vol 539-543 ◽  
pp. 3528-3533
Author(s):  
X.W. Zhou ◽  
D.A. Murdick ◽  
B. Gillespie ◽  
J.J. Quan ◽  
Haydn N.G. Wadley ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Atomic Scale ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Structures And Properties ◽  
Wide Range ◽  
Scale Structures ◽  
Kinetic Processes ◽  
Dynamics Simulations

The atomic-scale structures and properties of thin films are critically determined by the various kinetic processes activated during their atomic assembly. Molecular dynamics simulations of growth allow these kinetic processes to be realistically addressed at a timescale that is difficult to reach using ab initio calculations. The newest approaches have begun to enable the growth simulation to be applied for a wide range of materials. Embedded atom method potentials can be successfully used to simulate the growth of closely packed metal multilayers. Modified charge transfer ionic + embedded atom method potentials are transferable between metallic and ionic materials and have been used to simulate the growth of metal oxides on metals. New analytical bond order potentials are now enabling significantly improved molecular dynamics simulations of semiconductor growth. Selected simulations are used to demonstrate the insights that can be gained about growth processes at surfaces.

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