Measurement of Surface Roughness and Thickness of Silicon Wafers Using an Infrared Laser

2005 ◽  
Vol 291-292 ◽  
pp. 377-380 ◽  
Author(s):  
S. Koshimizu
Keyword(s):  
Surface Roughness ◽  
Infrared Radiation ◽  
Single Crystal Silicon ◽  
Optical Power ◽  
Infrared Laser ◽  
Silicon Wafers ◽  
Contact Method ◽  
Crystal Silicon ◽  
Infrared Laser Beam ◽  
Infrared Transmittance

A non-contact method of measuring the surface roughness and the thickness of polished silicon wafers using an infrared laser is proposed. The method utilizes the property that the infrared radiation is transmitted through single-crystal silicon. An optical-power meter is used to measure the intensity of an infrared laser beam that is incident to a chamfer on a cornered silicon wafer and which exits from the other side of the chamfer after repeated total reflections inside the wafer. The experimental results show that a significant correlation exists between the intensity of the transmitted infrared radiation and the surface roughness of the silicon wafers, as well as between the intensity and the thickness of the wafers. Therefore, if a calibration curve is pre-set, the surface roughness and the thickness can be estimated from the changes in the intensity of the infrared transmittance.

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

scholarly journals Проблемы при использовании травителя KOH-IPA для текстурирования кремниевых пластин

2020 ◽  
Vol 90 (10) ◽  
pp. 1758
Author(s):  
Н.А. Чучвага ◽  
Н.М. Кислякова ◽  
Н.С. Токмолдин ◽  
Б.А. Ракыметов ◽  
А.С. Серикканов
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Main Type ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Optimal Parameters ◽  
Crystal Silicon ◽  
High Efficiency Solar Cells ◽  
Wet Chemical ◽  
Manufacturing Techniques

The wet chemical treatment of monocrystalline silicon wafers, said method comprising texturing, represents one of the fundamental steps of manufacturing techniques of high-efficiency solar cells. As part of this work, methods for texturing single-crystal silicon wafers for solar cells were studied.As a result of studies, the optimal parameters of texturing technology for the studied samples were determined. The main type of etchant for texturing processes, which is a solution of KOH with isopropanol, is also determined.

scholarly journals Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Bin Xin ◽  
Wei Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Electrochemical Machining ◽  
Single Crystal Silicon ◽  
Recast Layer ◽  
Movement Speed ◽  
Crystal Silicon ◽  
Wedm Process

During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Electrodeposition of nanometer-thick epitaxial films of silver onto single-crystal silicon wafers

2019 ◽  
Vol 7 (6) ◽  
pp. 1720-1725 ◽  
Author(s):  
Qingzhi Chen ◽  
Jay A. Switzer
Keyword(s):  
Single Crystal ◽  
Electrochemical Method ◽  
Single Crystal Silicon ◽  
Epitaxial Films ◽  
Silicon Wafers ◽  
Silver Acetate ◽  
Crystal Silicon ◽  
Silver Films ◽  
First Time

Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath.

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