Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature

2007 ◽  
Vol 336-338 ◽  
pp. 2228-2231
Author(s):  
Xiao Qiang Wang ◽  
De Yan He ◽  
Jun Shuai Li
Keyword(s):  
Optical Properties ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Nano Crystalline ◽  
Si Films

Si films were deposited by inductively coupled plasma chemical vapor deposition at room temperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fourier transform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentration strongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration. The analysis for optical properties of the films suggested that the optical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has been observed that the EOPT of sample decreases with the increasing of H content in film.

Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

2006 ◽  
Vol 910 ◽  
Author(s):  
Sang-Myeon Han ◽  
Young-Kwan Cha ◽  
Joong-Hyun Park ◽  
Sang-Geun Park ◽  
YoungSoo Park ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Dilution Effect ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Si Films

AbstractThe nc-Si films where the troublesome incubation layer was almost eliminated were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) under various dilution conditions. The nc-Si films were analyzed with cross-sectional high resolution transmission electron microscopy (HR-TEM) images. It was verified that the Si crystalline components formed and grew from the surface of buffer layer. The grain size of 20~50nm was measured. The absence of incubation layer in nc-Si film may be attributed mainly to ICP-CVD which generates remote plasma of high density, the role of hydrogen, and the dilution effect on the growth of crystalline. Our experimental results show that incubation-free nc-Si film deposited by ICP-CVD may be suitable for the active layer of bottom gate nc-Si TFTs as well as top gate nc-Si TFTs.

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

2005 ◽  
Vol 862 ◽  
Author(s):  
Sang-Myeon Han ◽  
Joong-Hyun Park ◽  
Hye-Jin Lee ◽  
Kwang-Sub Shin ◽  
Min-Koo Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Process Gas ◽  
Si Films

AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

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