Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

2006 ◽  
Vol 910 ◽  
Author(s):  
Sang-Myeon Han ◽  
Young-Kwan Cha ◽  
Joong-Hyun Park ◽  
Sang-Geun Park ◽  
YoungSoo Park ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Dilution Effect ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Si Films

AbstractThe nc-Si films where the troublesome incubation layer was almost eliminated were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) under various dilution conditions. The nc-Si films were analyzed with cross-sectional high resolution transmission electron microscopy (HR-TEM) images. It was verified that the Si crystalline components formed and grew from the surface of buffer layer. The grain size of 20~50nm was measured. The absence of incubation layer in nc-Si film may be attributed mainly to ICP-CVD which generates remote plasma of high density, the role of hydrogen, and the dilution effect on the growth of crystalline. Our experimental results show that incubation-free nc-Si film deposited by ICP-CVD may be suitable for the active layer of bottom gate nc-Si TFTs as well as top gate nc-Si TFTs.

Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature

2007 ◽  
Vol 336-338 ◽  
pp. 2228-2231
Author(s):  
Xiao Qiang Wang ◽  
De Yan He ◽  
Jun Shuai Li
Keyword(s):  
Optical Properties ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Nano Crystalline ◽  
Si Films

Si films were deposited by inductively coupled plasma chemical vapor deposition at room temperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fourier transform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentration strongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration. The analysis for optical properties of the films suggested that the optical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has been observed that the EOPT of sample decreases with the increasing of H content in film.

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

2005 ◽  
Vol 862 ◽  
Author(s):  
Sang-Myeon Han ◽  
Joong-Hyun Park ◽  
Hye-Jin Lee ◽  
Kwang-Sub Shin ◽  
Min-Koo Han
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Process Gas ◽  
Si Films

AbstractNanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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