Antimony Doping Effect on Barium Strontium Titanate

2012 ◽  
Vol 512-515 ◽  
pp. 1150-1154 ◽  
Author(s):  
Gui Bin Ge ◽  
Jian Yong Zhuang ◽  
Fan Zhang ◽  
Yi Ling Chen ◽  
Y. Umeda ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sintering Temperature ◽  
Doping Effect ◽  
Sintering Process ◽  
Barium Strontium ◽  
Antimony Doping ◽  
Sb Doping ◽  
Addition Amount

Doping effect of Sb on Pb-free barium strontium titanate was investigated. The Sb doped (Ba,Sr)TiO3 ceramics were prepared by solid reactions in 1473-1623 K by employing 0~1.2 wt% Sb2O5 as main additives. Density changes with sintering temperature were determined. The morphology and microstructure of the Sb doping samples were analyzed by SEM. The dielectric properties such as permittivity and dielectric loss were measured. It was found that addition of Sb benefited to low temperature high density sintering process. When the addition amount of Sb2O5 was about 0.6 wt%, the dielectric loss of (Ba,Sr)TiO3 was decreased from 1.9% to about 0.4% while the dielectric constant was kept over 2000. Possible mechanism of the improvement by Sb addition was discussed too.

Barium Strontium Titanate Ceramics Prepared by a Reaction-Sintering Process

2004 ◽  
Vol 848 ◽  
Author(s):  
Yi-Cheng Liou ◽  
Jen-Hsien Chen ◽  
Chi-Ting Wu
Keyword(s):  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sintering Temperature ◽  
Raw Materials ◽  
Reaction Sintering ◽  
Sintering Process ◽  
Barium Strontium ◽  
Bst Ceramics ◽  
Titanate Ceramics

ABSTRACTBarium strontium titanate (Ba0.7Sr0.3TiO3, BST) ceramics prepared by a reaction-sintering process were investigated. The mixture of raw materials of stoichiometric Ba0.7Sr0.3TiO3 was pressed and sintered into ceramics without any calcination stage involved. Perovskite BST ceramics were obtained after sintered at 1330–1370°C for 2–6 h. For 6 h soak time, a density value 5.68g/cm3 (99.8% of the theoretic value) was obtained at 1350°C sintering. Grains of sizes between 2μm and 15μm were formed after 1330–1370°C sintering for 2–6 h. A diffused ferroelectric-paraelectric transition was observed in pellets sintered at 1330°C for 2 h and disappeared at a longer soak time or a higher sintering temperature.

scholarly journals Preparation of Integrated Passive Microwave Devices Through Inkjet Printing

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000232-000239 ◽  
Author(s):  
A. Friederich ◽  
C. Kohler ◽  
M. Sazegar ◽  
M. Nikfalazar ◽  
R. Jakoby ◽  
...  
Keyword(s):  
Grain Growth ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Inkjet Printing ◽  
Sintering Temperature ◽  
Thick Films ◽  
Passive Microwave ◽  
Microwave Devices ◽  
Barium Strontium ◽  
Passive Microwave Devices

Barium strontium titanate (BST) is a promising material for passive tunable microwave devices such as phase shifters or tunable matching networks. This publication covers the preparation of BST thick-films for microwave applications through inkjet printing. Two barium strontium titanate (BST) inks were prepared, printed on alumina substrates and sintered at different temperatures. The first ink was prepared with pure BST and sintered between 1100°C and 1200°C. The second ink was prepared with a BST–ZnO–B2O3 composition and was suitable to reduce the sintering temperature down to 800°C. The microstructure of the thick-films reveals the evolution of grain growth with increasing sintering temperature in the thick-films. Furthermore, a reaction with the substrate was observed for both inks at high sintering temperatures. The microwave characterization of the thick-films shows that for the permittivity and the tunability of the films, the effect of grain growth and reaction with the substrate compete against each other. Hence, the optimal microwave properties were achieved at a transition temperature, where first additional phases could already be observed. Even though, the properties are poorer for lower sintering temperatures, the investigations show that the preparation of silver- or gold-based metal–insulator–metal (MIM) structures through inkjet printing is possible with this composition. This allows various new design concepts for partly or fully inkjet printed passive microwave devices. Furthermore, it gives the opportunity for a future integration of passive tunable microwave devices in a low temperature co-fired ceramic (LTCC) fabrication process.

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