Effect of Si and Ba Addition on ZnO Grain Growth and Electrical Characteristics of Bi-Based ZnO Varistors
2013 ◽
Vol 566
◽
pp. 219-222
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Keyword(s):
With the goal of fabricating varistors with low varistor voltages, we investigated the effects of adding Ba and Si to BiCoMn-added ZnO varistors on the varistor voltage and the resistance to electrical degradation. Ba2Mn3O8, which reduces the resistance to electrical degradation, was not formed at the grain boundary when Si was added. The resistance to electrical degradation was considerably improved by adding 0.10.15 mol% Si relative to samples to which small amounts of Sb had been added. The varistor voltage increased monotonically with increasing amount of added Si; it was approximately 36 V/mm for 0.1 mol% Si.
2011 ◽
Vol 343-344
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pp. 160-165
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Keyword(s):
2011 ◽
Vol 485
◽
pp. 253-256
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Keyword(s):
2010 ◽
Vol 445
◽
pp. 241-244
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Keyword(s):
2011 ◽
Vol 485
◽
pp. 257-260
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2013 ◽
Vol 582
◽
pp. 181-184
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2010 ◽
Vol 445
◽
pp. 237-240
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2011 ◽
Vol 131
(3)
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pp. 211-218