Effects of Thermal Annealing for Barium and Silicon-Added Bismuth Based Zinc Oxide Varistors on Electrical Properties and Grain Boundary Structure
Keyword(s):
In order to fabricate varistors with low varistor voltage, the effects of thermal annealing of CoMnBaSi-added Bi based ZnO varistors on electrical properties and the grain boundary structure were investigated. The varistor voltage for the BiCoMnBaSi-added ZnO varistor decreased in half by thermal annealing for a short time. The resistance to electrical degradation was most improved by the addition of SiO2and thermal annealing for 1020 min. It is suggested that the composition of Bi and Si in the sheet-like deposit is changed by varying the annealing time and the resistance to electrical degradation is improved by both addition of SiO2as well as thermal annealing for short time.
2012 ◽
Vol 95
(8)
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pp. 2579-2586
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2000 ◽
Vol 181-182
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pp. 225-230
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2019 ◽
1990 ◽
Vol 48
(4)
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pp. 374-375
1977 ◽
Vol 35
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pp. 688-691
1980 ◽
Vol 38
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pp. 366-369
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1975 ◽
Vol 36
(C4)
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pp. C4-17-C4-22
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Keyword(s):
1988 ◽
Vol 49
(C5)
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pp. C5-617-C5-622
1988 ◽
Vol 49
(C5)
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pp. C5-327-C5-336
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