Effects of Zr and Y Addition on the Electrical Degradation Characteristics of ZnO Varistors

2010 ◽  
Vol 445 ◽  
pp. 237-240 ◽  
Author(s):  
Yuji Akiyama ◽  
Ai Fukumori ◽  
Masayuki Takada ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

The effects of the addition of Y or both Y and Zr to Bi-Mn-Co-Sb-Si-Cr-Ni-added ZnO varistors on the varistor voltage and the tolerance characteristics of electrical degradation were investigated. The deterioration of the tolerance characteristics of electrical degradation by the addition of Y was probably caused by an increase in the number of willemite (Zn2SiO4)-type particles or a decrease in the number of spinel (Zn2.33Sb0.67O4)-type particles, but this deterioration was reduced by adding Zr. Moreover, the reduction in the average ZnO grain size due to the addition of Y was a major factor in the increased varistor voltage, and the ZnO grain growth was inhibited by the formation of an un-known compound after adding Y. The varistor voltage of a varistor with 2 mol% added Y increased by approximately 50% compared to a varistor with no Y added.

2011 ◽  
Vol 485 ◽  
pp. 253-256 ◽  
Author(s):  
Ai Fukumori ◽  
Takayuki Watanabe ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

With the goal of fabricating varistors with low breakdown voltages (varistor voltages), the effect of adding Sb to Bi-Co-Mn-Ba-added ZnO varistors on the ZnO grain size was investigated. To obtain a uniform ZnO grain size without reducing the grain size, a small amount (e.g., 0.01 mol%) of Sb was added as an additive. This addition suppresses the variation in the ZnO grain size without reducing the grain size. It also improved the resistance to electrical degradation because compounds of Ba and Mn were not formed.


2010 ◽  
Vol 445 ◽  
pp. 241-244 ◽  
Author(s):  
Ai Fukumori ◽  
Masayuki Takada ◽  
Yuji Akiyama ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

With the goal of fabricating low-breakdown-voltage varistors, the effect of adding Ba to ZnO varistors on the ZnO grain size was investigated. Grain growth of ZnO could be markedly promoted by adding both Ba and Bi. The maximum grain size was approximately 150 μm and the minimum varistor voltage was approximately 12 V/mm. However, it had relatively poor tolerance characteristics for electrical degradation. It is speculated that when adding both Ba and Bi to a Mn–Co-added ZnO varistor, it is necessary to form the molten phases of Ba and Bi to promote grain growth of ZnO. It is also conjectured that the growth of ZnO grains is not promoted when Ba and Bi do not coexist in the molten phase because Ba forms compounds with Mn independently with the addition of small amounts of Bi.


2013 ◽  
Vol 566 ◽  
pp. 219-222 ◽  
Author(s):  
Atsuko Kubota ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

With the goal of fabricating varistors with low varistor voltages, we investigated the effects of adding Ba and Si to BiCoMn-added ZnO varistors on the varistor voltage and the resistance to electrical degradation. Ba2Mn3O8, which reduces the resistance to electrical degradation, was not formed at the grain boundary when Si was added. The resistance to electrical degradation was considerably improved by adding 0.10.15 mol% Si relative to samples to which small amounts of Sb had been added. The varistor voltage increased monotonically with increasing amount of added Si; it was approximately 36 V/mm for 0.1 mol% Si.


2011 ◽  
Vol 131 (3) ◽  
pp. 219-224
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Yuuki Sato ◽  
...  

2010 ◽  
Vol 130 (4) ◽  
pp. 394-402 ◽  
Author(s):  
Yuji Akiyama ◽  
Masayuki Takada ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

2021 ◽  
Vol 127 (9) ◽  
Author(s):  
Andre Mayer ◽  
Tobias Haeger ◽  
Manuel Runkel ◽  
Johannes Rond ◽  
Johannes Staabs ◽  
...  

AbstractThe quality and the stability of devices prepared from polycrystalline layers of organic–inorganic perovskites highly depend on the grain sizes prevailing. Tuning of the grain size is either done during layer preparation or in a post-processing step. Our investigation refers to thermal imprint as the post-processing step to induce grain growth in perovskite layers, offering the additional benefit of providing a flat surface for multi-layer devices. The material studied is MAPbBr3; we investigate grain growth at a pressure of 100 bar and temperatures of up to 150 °C, a temperature range where the pressurized stamp is beneficial to avoid thermal degradation. Grain coarsening develops in a self-similar way, featuring a log-normal grain size distribution; categories like ‘normal’ or ‘secondary’ growth are less applicable as the layers feature a preferential orientation already before imprint-induced grain growth. The experiments are simulated with a capillary-based growth law; the respective parameters are determined experimentally, with an activation energy of Q ≈ 0.3 eV. It turns out that with imprint as well the main parameter relevant to grain growth is temperature; to induce grain growth in MAPbBr3 within a reasonable processing time a temperature of 120 °C and beyond is advised. An analysis of the mechanical situation during imprint indicates a dominance of thermal stress. The minimization of elastic energy and surface energy together favours the development of grains with (100)-orientation in MaPbBr3 layers. Furthermore, the experiments indicate that the purity of the materials used for layer preparation is a major factor to achieve large grains; however, a diligent and always similar preparation of the layer is equally important as it defines the pureness of the resulting perovskite layer, intimately connected with its capability to grow. The results are not only of interest to assess the potential of a layer with respect to grain growth when specific temperatures and times are chosen; they also help to rate the long-term stability of a layer under temperature loading, e.g. during the operation of a device.


1994 ◽  
Vol 343 ◽  
Author(s):  
J. A. Floro ◽  
C. V. Thompson

ABSTRACTAbnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the average size. This is known as secondary grain growth. In polycrystalline thin films, the surface energy γs and film/substrate interfacial energy γi vary with grain orientation, providing an orientation-selective driving force that can lead to abnormal grain growth. We employ a mean field analysis that incorporates the effect of interface energy anisotropy to predict the evolution of the grain size/orientation distribution. While abnormal grain growth and texture evolution always result when interface energy anisotropy is present, whether secondary grain growth occurs will depend sensitively on the details of the orientation dependence of γi.


2007 ◽  
Vol 551-552 ◽  
pp. 387-392 ◽  
Author(s):  
Wen Juan Zhao ◽  
Hua Ding ◽  
D. Song ◽  
F.R. Cao ◽  
Hong Liang Hou

In this study, superplastic tensile tests were carried out for Ti-6Al-4V alloy using different initial grain sizes (2.6 μm, 6.5μm and 16.2 μm) at a temperature of 920°C with an initial strain rate of 1×10-3 s-1. To get an insight into the effect of grain size on the superplastic deformation mechanisms, the microstructures of deformed alloy were investigated by using an optical microscope and transmission electron microscope (TEM). The results indicate that there is dramatic difference in the superplastic deformation mode of fine and coarse grained Ti-6Al-4V alloy. Meanwhile, grain growth induced by superplastic deformation has also been clearly observed during deformation process, and the grain growth model including the static and strain induced part during superplastic deformation was utilized to analyze the data of Ti-6Al-4V alloy.


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