Simulation of Temperature Distribution in HFCVD Diamond Films Growth on WC-Co Drill Tools in Large Quantities

2013 ◽  
Vol 589-590 ◽  
pp. 399-404 ◽  
Author(s):  
Lei Cheng ◽  
Jian Guo Zhang ◽  
Xin Chang Wang ◽  
Tao Zhang ◽  
Bin Shen ◽  
...  

The substrate temperature distribution in hot filament chemical vapor deposition (HFCVD) diamond films growth on drill tools in large quantities are simulated by the finite volume method (FVM), adopting a detailed 3-D computational model corresponding with the actual reactor. Firstly, the correctness of the simulation model is verified by comparing the temperature data obtained from the simulation with that measured in an actual depositing process, and the results show that the error between them is less than 3%. Thereafter, the influences of several parameters are studied, including the filament separation (D), the length of the filament (L) and the filament-substrate distance (H). The simulation results show the three parameters have different effects on the distribution of temperature field. The influence of D is the greatest, L is followed and then H. The simulation has important theoretical guidance on both the development of HFCVD deposition equipment using for the diamond coating on tools with complex shapes in large quantities and the research of related production process.

2007 ◽  
Vol 10-12 ◽  
pp. 864-868 ◽  
Author(s):  
Wei Zuo ◽  
Bin Shen ◽  
Fang Hong Sun ◽  
Ming Chen

Three-dimensional finite element simulations were used to investigate the influences of various hot filaments and other deposition parameters on the temperature field of substrates which affect significantly the growth and quality of diamond films by hot filament chemical vapor deposition (HFCVD) and based on the simulation results, the optimum position for diamond deposition was found. In the experiment, six cemented tungsten carbide inserts were used as substrates and placed on the workbench in the CVD reactor to deposit diamond films. According to the temperature distribution on substrates measured by thermocouple fixed in CVD reactor, the simulations were validated and the optimum arrangement of substrates was established from the simulation results. In addition, the simulation model was altered to optimize the process parameters of HFCVD deposition, and an improved process of depositing diamond films with high quality was obtained in order to achieve the great surface morphology, which laid the foundation of developing a new method to arrange the substrates in the CVD reactor for depositing diamond films.


2014 ◽  
Vol 1027 ◽  
pp. 195-198 ◽  
Author(s):  
Jian Jin Liu ◽  
Bo Song ◽  
Tao Zhang ◽  
Fang Hong Sun

The uniform temperature flied of substrates is a key factor to deposit high-quality diamond films on milling tools by the hot filament chemical vapor deposition (HFCVD). In this study, a 3-D computational model is established to simulate the temperature distribution on the substrates. Thereafter, the influence of the rotational speed of worktable n and the water flux of water-cooled worktable Q are investigated. The simulation results show that the increasing of the rotational speed of worktable is suitable to grow homogeneous diamond films and gently decrease the even temperature of seals. What’s more, the deceasing of the water flux will significantly increase the overall temperature of seals.


2011 ◽  
Vol 697-698 ◽  
pp. 454-457 ◽  
Author(s):  
T. Zhang ◽  
Jian Guo Zhang ◽  
Bin Shen ◽  
Fang Hong Sun

The substrate temperature has great influence on the growth rate and quality of diamond films by hot filament chemical vapor deposition (HFCVD). In order to deposit polycrystalline diamond films of uniform thickness over large areas and improve the growth rate of diamond films, the substrate temperature uniformity need to be further improved. Thus three-dimensional finite volume simulation has been developed to predict substrate temperature distribution, and optimize the deposition parameters like the size and arrangement of filaments which have a profound effect on the substrate temperature. Based on the simulation results, the optimum parameters of diamond deposition are found. Subsequently, experiments of depositing diamond films on silicon (100) wafers are done when the deposition parameters are fixed at optimum values gained from the simulation results. According to the results of scanning electron microscopy (SEM) and Raman spectroscopy, the thickness and quality of diamond films are homogeneous, which validate that the simulated deposition parameters are conducive to fabricate the high quality diamond films.


2011 ◽  
Vol 188 ◽  
pp. 122-127
Author(s):  
Liang Wang ◽  
Jian Guo Zhang ◽  
Bin Shen ◽  
Fang Hong Sun

CVD diamond films are deposited on cobalt cemented tungsten carbide (WC-Co) endmills using hot filament chemical vapor deposition (HFCVD) method. Scanning electron microscope (SEM) and Raman spectroscopy are used to characterize the as-deposited diamond films. To evaluate the cutting performances of as-fabricated CVD diamond coated endmills, dry milling tests are conducted using aluminum alloy as the workpiece material. The uncoated WC-Co endmills are also adopted in the milling tests for the sake of comparability. The experimental results show that the build-up edge formed on the uncoated WC-Co endmills at very early stage of the cutting tests. Comparatively, CVD diamond coated endmills present an excellent anti-adhering property. The result suggests that depositing diamond coating on WC-Co endmills is a viable way to improve their cutting performances in machining of aluminum alloy materials


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


2009 ◽  
Vol 1203 ◽  
Author(s):  
R. Vispute ◽  
Andrew Seiser ◽  
Geun Lee ◽  
Jaurette Dozier ◽  
Jeremy Feldman ◽  
...  

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.


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