The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering

Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.

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Copper nitride and tin nitride thin films for write‐once optical recording media

Applied Physics Letters ◽

10.1063/1.117978 ◽

1996 ◽

Vol 69 (7) ◽

pp. 890-891 ◽

Cited By ~ 161

Author(s):

Toshiro Maruyama ◽

Tomonori Morishita

Keyword(s):

Thin Films ◽

Optical Recording ◽

Recording Media ◽

Copper Nitride ◽

Tin Nitride

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Crystallization Mechanism of Si/Cu100-xZrx Bilayer Film for Write-Once Blue Laser Optical Recording Media

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.643 ◽

2010 ◽

Vol 123-125 ◽

pp. 643-646

Author(s):

Sin Liang Ou ◽

Po Cheng Kuo ◽

Chih Hsiang Hsiao ◽

Don Yau Chiang ◽

Chao Te Lee ◽

...

Keyword(s):

Thin Films ◽

Optical Property ◽

Magnetron Sputtering ◽

Optical Recording ◽

Crystallization Mechanism ◽

Blue Laser ◽

Bilayer Film ◽

Recording Media ◽

Protective Layers ◽

Bilayer Films

Si/Cu100xZrx (x= 0~38.1) bilayer recording thin films were deposited on nature oxidized silicon wafer, and glass substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, optical property, and crystallization mechanism of the Si/Cu100-xZrx bilayer thin films. The optical contrasts of the Si/Cu100-xZrx (x= 0~38.1) bilayer films under 405 nm wavelength are all larger than 15%, and it reaches a high value of 40%, as x= 38.1. This indicates that the Si/Cu100-xZrx (x= 0~38.1) bilayer films are suitable for blue laser optical recording.

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Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.2752 ◽

2011 ◽

Vol 239-242 ◽

pp. 2752-2755

Author(s):

Fan Ye ◽

Xing Min Cai ◽

Fu Ping Dai ◽

Dong Ping Zhang ◽

Ping Fan ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Optical Band Gap ◽

Diffraction Peak ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Flow Rates ◽

X Ray ◽

Equal Distance ◽

Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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Thermal decomposition of copper nitride thin films and dots formation by electron beam writing

Applied Surface Science ◽

10.1016/s0169-4332(00)00681-4 ◽

2001 ◽

Vol 169-170 ◽

pp. 358-361 ◽

Cited By ~ 96

Author(s):

Toshikazu Nosaka ◽

Masaaki Yoshitake ◽

Akio Okamoto ◽

Soichi Ogawa ◽

Yoshikazu Nakayama

Keyword(s):

Thin Films ◽

Thermal Decomposition ◽

Electron Beam ◽

Copper Nitride

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Experimental study of the electrical properties of copper nitride thin films prepared by dc magnetron sputtering

The European Physical Journal Applied Physics ◽

10.1051/epjap/2010100298 ◽

2010 ◽

Vol 53 (1) ◽

pp. 10501 ◽

Cited By ~ 4

Author(s):

D. Dorranian ◽

G. Mosayebian

Keyword(s):

Thin Films ◽

Experimental Study ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Dc Magnetron Sputtering ◽

Copper Nitride

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Optical Properties of Multi-layer Chalcogenide Thin Film for Optical Recording Media

MRS Proceedings ◽

10.1557/proc-803-hh4.7 ◽

2003 ◽

Vol 803 ◽

Author(s):

Myung-Jin Kang ◽

Chan-Gyung Park ◽

Se-Young Choi

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Data Storage ◽

Optical Band Gap ◽

Optical Recording ◽

Recording Media ◽

Optical Contrast ◽

The Media ◽

Chalcogenide Thin Film

ABSTRACTWe present the results of optical properties of multi layer thin films as in the media of phase change optical disk data storage. Reflectance and optical contrast of multi layer thin films increased rapidly between 100 °C and 150 °C. Moreover, optical contrasts at different wavelength were also studied. The refractive index and the optical band gap decreased, while the extinction coefficient increases as the crystallization occurs. The Egopt of crystalline thin film was ∼0.6 eV lower than that of amorphous thin film. Egopt decreased as the number of stacked layer increased.

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THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

Modern Physics Letters B ◽

10.1142/s0217984909019077 ◽

2009 ◽

Vol 23 (08) ◽

pp. 1077-1083 ◽

Cited By ~ 3

Author(s):

JING XU ◽

GUANGHUI MIN ◽

XIAOHUA ZHAO ◽

LIJIE HU ◽

HUASHUN YU

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Magnetron Sputtering ◽

Bias Voltage ◽

Diffraction Peak ◽

Dc Magnetron Sputtering ◽

Crystal Face ◽

Deposited Films ◽

Stylus Profiler ◽

Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

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