Thermal decomposition of copper nitride thin films and dots formation by electron beam writing

2001 ◽  
Vol 169-170 ◽  
pp. 358-361 ◽  
Author(s):  
Toshikazu Nosaka ◽  
Masaaki Yoshitake ◽  
Akio Okamoto ◽  
Soichi Ogawa ◽  
Yoshikazu Nakayama
2014 ◽  
Vol 636 ◽  
pp. 29-32
Author(s):  
Xing Ao Li ◽  
Rong Yang ◽  
Wen Jie Liu ◽  
Jia Han ◽  
Jian Bo Yang ◽  
...  

Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-675-Pr3-682 ◽  
Author(s):  
Y. S. Min ◽  
Y. J. Cho ◽  
D. Kim ◽  
J. H. Lee ◽  
B. M. Kim ◽  
...  

2003 ◽  
Vol 777 ◽  
Author(s):  
J.S. Romero ◽  
A.G. Fitzgerald

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).


Author(s):  
Jako S. Eensalu ◽  
Kaia Tõnsuaadu ◽  
Jasper Adamson ◽  
Ilona Oja Acik ◽  
Malle Krunks

AbstractThermal decomposition of tris(O-ethyldithiocarbonato)-antimony(III) (1), a precursor for Sb2S3 thin films synthesized from an acidified aqueous solution of SbCl3 and KS2COCH2CH3, was monitored by simultaneous thermogravimetry, differential thermal analysis and evolved gas analysis via mass spectroscopy (TG/DTA-EGA-MS) measurements in dynamic Ar, and synthetic air atmospheres. 1 was identified by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance (NMR) measurements, and quantified by NMR and elemental analysis. Solid intermediates and final decomposition products of 1 prepared in both atmospheres were determined by X-ray diffraction (XRD), Raman spectroscopy, and FTIR. 1 is a complex compound, where Sb is coordinated by three ethyldithiocarbonate ligands via the S atoms. The thermal degradation of 1 in Ar consists of three mass loss steps, and four mass loss steps in synthetic air. The total mass losses are 100% at 800 °C in Ar, and 66.8% at 600 °C in synthetic air, where the final product is Sb2O4. 1 melts at 85 °C, and decomposes at 90–170 °C into mainly Sb2S3, as confirmed by Raman, and an impurity phase consisting mostly of CSO 2 2− ligands. The solid-phase mineralizes fully at ≈240 °C, which permits Sb2S3 to crystallize at around 250 °C in both atmospheres. The gaseous species evolved include CS2, C2H5OH, CO, CO2, COS, H2O, SO2, and minor quantities of C2H5SH, (C2H5)2S, (C2H5)2O, and (S2COCH2CH3)2. The thermal decomposition mechanism of 1 is described with chemical reactions based on EGA-MS and solid intermediate decomposition product analysis.


2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  

2006 ◽  
Vol 500 (1-2) ◽  
pp. 101-104 ◽  
Author(s):  
Tadashi Kitahara ◽  
Yoshiro Nomoto ◽  
Norio Ichikawa

2012 ◽  
Vol 111 (3) ◽  
pp. 975-981 ◽  
Author(s):  
R. E. Marvel ◽  
K. Appavoo ◽  
B. K. Choi ◽  
J. Nag ◽  
R. F. Haglund

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