Study on Brittle-Ductile Transition Mechanism of Ultra-Precision Turning of Single Crystal Silicon

2008 ◽  
Vol 375-376 ◽  
pp. 11-16 ◽  
Author(s):  
Ming Hai Wang ◽  
Ze Sheng Lu
Keyword(s):  
Single Crystal ◽  
Chip Thickness ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Precision Turning ◽  
Brittle Ductile Transition ◽  
Transition Mechanism ◽  
Effect Theory ◽  
Ultra Precision ◽  
Cutting Model

According to the size effect theory established on the concept of geometrically necessary dislocations and results of nano-indentation experiments, a novel brittle-ductile mechanism of ultra-precision turning of single crystal silicon is proposed. The accurate critical chip thickness is firstly calculated on the basis of theoritical analysis. A macro-micro cutting model is created based on the brittle-ductile transition mechanism. Finally, the results of study are testified through experiments.

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

Some observations on the wear of diamond tools in ultra-precision cutting of single-crystal silicon

Wear ◽  
2003 ◽  
Vol 255 (7-12) ◽  
pp. 1380-1387 ◽  
Author(s):  
Jiwang Yan ◽  
Katsuo Syoji ◽  
Jun’ichi Tamaki
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Tools ◽  
Ultra Precision
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