The effect of uncut chip thickness on edge chipping and wheel performance in groove grinding of single crystal silicon

According to the size effect theory established on the concept of geometrically necessary dislocations and results of nano-indentation experiments, a novel brittle-ductile mechanism of ultra-precision turning of single crystal silicon is proposed. The accurate critical chip thickness is firstly calculated on the basis of theoritical analysis. A macro-micro cutting model is created based on the brittle-ductile transition mechanism. Finally, the results of study are testified through experiments.

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Prediction of critical undeformed chip thickness for ductile mode to brittle transition in the cutting of single-crystal silicon

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab9bee ◽

2020 ◽

Vol 35 (9) ◽

pp. 095010

Author(s):

Longxu Yao ◽

Lei Zhang ◽

Qianqing Jiang ◽

Chunfeng Yang

Keyword(s):

Single Crystal ◽

Chip Thickness ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Undeformed Chip Thickness ◽

Brittle Transition ◽

Ductile Mode

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Study on Influence Laws of Surface Roughness of Micro-Groove in Single Crystal Silicon under Diamond Fly-Cutting

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.667.142 ◽

2015 ◽

Vol 667 ◽

pp. 142-148 ◽

Cited By ~ 1

Author(s):

Yan Yan Yan ◽

Run Xing Wang ◽

Bo Zhao

Keyword(s):

Surface Roughness ◽

Single Crystal ◽

Chip Thickness ◽

Single Crystal Silicon ◽

Spindle Speed ◽

Cutting Depth ◽

Crystal Silicon ◽

Groove Surface ◽

Undeformed Chip Thickness ◽

Fly Cutting

Single crystal silicon has both important application value in the fields of micro-optics and MEMS, and it has been considered as one of the most difficult-to-cut materials because of its hardness and brittleness. Removal mechanism of the silicon was discussed, and the model of undeformed chip thickness was established in this article. According to the data of micro-groove surface roughness from the diamond fly-cutting experiment, the nonlinear relationship curve, between the largest undeformed chip thicknesshmaxand microgroove surface roughnessRa,were obtained using Gaussian-fitting principle, and the regression equation of the fitting curve was also got. Thus the prediction mathematical model of microgroove surface roughness was derived. The influence laws of the main working parameters on theRawere obtained based on the result of this experiment and the response surface of the prediction model, and some conclusions were summarized: the surface roughnessRaof microgroove in the single crystal silicon decreases with the decrease of the cutting depthap, the feed f and the increase of the spindle speednunder the diamond fly-cutting; the experimental results also showed that feedfaffects the value ofRavery much, cutting depthapless, and spindle speednthe least.

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Mapping Ductile-To-Fragile Transition And The Effect of Tool Nose Radius In Diamond Turning of Single-Crystal Silicon

10.21203/rs.3.rs-888654/v1 ◽

2021 ◽

Author(s):

Marcel Henrique Militão Dib ◽

José Antonio Otoboni ◽

Renato Goulart Jasinevicius

Keyword(s):

Single Crystal ◽

Chip Thickness ◽

Single Crystal Silicon ◽

Rake Angle ◽

Response Surfaces ◽

Diamond Turning ◽

Tool Geometry ◽

Nose Radius ◽

Crystal Silicon ◽

Machining Conditions

Abstract Although it has long been known that tools with more negative rake angles allow the ductile regime to be achieved when machining monocrystalline silicon; little has been discussed about the tool-material interaction in terms of the microgeometric contact of the tool tip at this interface. In this paper, the tool rake angle was varied in order to change the undeformed chip thickness value once the tool cutting radius, formed in front of the tool rake face, changes when the tool rake angle becomes more negative. Based on the statistical design of the experiment applied to cutting tests, a map relating values of transition pressure and different crystallographic directions is built to assist in determining machining conditions with a ductile response within a wider spectrum based on tool rake angle under different machining conditions. The results obtained allowed to answer questions under which machining conditions and tool geometry account for better surface finishes, lower machining forces, and lower residual stresses. The response surfaces generated provided answers capable of establishing under which cutting radii yielded more ductile mode material removal and avoided a brittle response, related to anisotropic response due to change in the crystallographic direction. Finally, we used the brittle-to-ductile transition map to determine a more suitable machining condition to diamond turn Fresnel lenses in single crystal silicon.

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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