Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Structural, optical, and electrical properties of tin sulfide thin films grown with electron-beam evaporation

2015 ◽  
Vol 15 (9) ◽  
pp. 964-969 ◽  
Author(s):  
Hui Kyung Park ◽  
Jaeseung Jo ◽  
Hee Kyeung Hong ◽  
Gwang Yeom Song ◽  
Jaeyeong Heo
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Tin Sulfide ◽  
Optical And Electrical Properties

Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

Vacuum ◽  
2007 ◽  
Vol 81 (9) ◽  
pp. 1023-1028 ◽  
Author(s):  
Jianke Yao ◽  
Jianda Shao ◽  
Hongbo He ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties
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