Features of Difference Scheme for the Diffusion-Kinetic Problem of Ion Implantation with Intermetallic Phases Formation

The implicit difference scheme has been suggested for the solution of diffusion-kinetic problem describing the ion implantation by intermetallic phase formation. The model corresponds to irreversible conditions and includes finite relaxation times for mass fluxes. The linear difference equations are solved by double-sweep method. The result illustrates the convergence of difference scheme at variation of its parameters. Qualitative picture of phase evolution in the surface layer is obtained different for problem with finite relaxation times and for zero relaxation times.

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A one sweep method for linear difference equations with two point boundary conditions

CALCOLO ◽

10.1007/bf02575598 ◽

1970 ◽

Vol 7 (3-4) ◽

pp. 249-259

Author(s):

R. Kalaba

Keyword(s):

Boundary Conditions ◽

Difference Equations ◽

Point Boundary ◽

Linear Difference Equations ◽

Sweep Method

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Diffusion of Si and Ge in the Intermetallic Phase Fe3Si: Ion Implantation and SIMS Studies

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.194-199.499 ◽

2001 ◽

Vol 194-199 ◽

pp. 499-504 ◽

Cited By ~ 4

Author(s):

M. Wellen ◽

P. Fielitz ◽

Günter Borchardt ◽

S. Weber ◽

S. Scherrer ◽

...

Keyword(s):

Ion Implantation ◽

Intermetallic Phase ◽

Si Ion Implantation

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Intermetallic phase evolution and strengthening effect in Al–Mg2Si alloys with different Cu/Ni ratios

Materials Letters ◽

10.1016/j.matlet.2017.12.067 ◽

2018 ◽

Vol 215 ◽

pp. 254-258 ◽

Cited By ~ 12

Author(s):

Yilin Sun ◽

Chong Li ◽

Yongchang Liu ◽

Liming Yu ◽

Huijun Li

Keyword(s):

Intermetallic Phase ◽

Phase Evolution ◽

Strengthening Effect

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Nonlinear Optical Materials Synthesized by Ion Implantation: Metal Quantum Dots in Transparent Dielectrics

MRS Proceedings ◽

10.1557/proc-316-421 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 2

Author(s):

Richard F. Haglund ◽

D. H. Osborne ◽

LI Yang ◽

R. H. Magruder ◽

C. W. White ◽

...

Keyword(s):

Ion Implantation ◽

Nonlinear Optical ◽

Relaxation Times ◽

Device Fabrication ◽

Size Distributions ◽

Nonlinear Waveguide ◽

Transparent Dielectrics ◽

Basic Features ◽

Spherical Potential ◽

Simple Picture

ABSTRACTComposites consisting of nanometer-size metal clusters embedded in a host dielectric can be synthesized by implanting metal ions in either glassy or crystalline substrates. The size and size distributions of the nanoclusters can be controlled by varying the parameters either of the ion-implantation process or subsequent annealing. The nonlinear optical response of these quantum-dot composites can be modeled as that of independent electrons confined to a spherical potential well; experimental data on relaxation times compares favorably with this simple picture. Optical figures-of-merit of these materials suggest potential for applications in nonlinear waveguide devices, particularly since ion implantation is compatible with device-fabrication processes. The basic features of these materials are illustrated from experiments on Cu and Pb clusters in silica.

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