Highly Tm Doped Silica Optical Preform by MCVD - Chelate Vapor Delivery (Soot-Dopant Stepwise Technique)

2018 ◽  
Vol 780 ◽  
pp. 57-61 ◽  
Author(s):  
K.A. Mat-Sharif ◽  
Nasr Y.M. Omar ◽  
M.I. Zulkifli ◽  
S.Z. Muhd-Yassin ◽  
Y.K. Sin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Peak ◽  
Strong Absorption ◽  
Silica Fiber ◽  
Index Variation ◽  
Strong Absorption Peak

This paper presents the progress in the fabrication of highly doped thulium silica fiber. As much as 5.3 wt. % Tm alongside 7.1 wt. % Al (co-dopant) were incorporated into silica preform. The preform was fabricated using the Modified Chemical Vapor Deposition (MCVD)-chelate vapor delivery with soot-dopant stepwise technique. The preform was analyzed for several key properties such as refractive index variation along deposition length, dopants distribution profiles and UV-Vis absorption. The results showed a homogeneous dopants distribution with 4% RSD in the longitudinal refractive index along a 40 cm preform length. The UV-Vis absorption spectrum exhibited a strong absorption peak at 790 nm attributed to Tm 3H4 energy manifold.

SiO2/TiO2 thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

2006 ◽  
Vol 500 (1-2) ◽  
pp. 19-26 ◽  
Author(s):  
F. Gracia ◽  
F. Yubero ◽  
J.P. Holgado ◽  
J.P. Espinos ◽  
A.R. Gonzalez-Elipe ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Tio2 Thin Films

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

2013 ◽  
Vol 102 (22) ◽  
pp. 221106 ◽  
Author(s):  
Martin Rigler ◽  
Marko Zgonik ◽  
Marc P. Hoffmann ◽  
Ronny Kirste ◽  
Milena Bobea ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Plasma enhanced chemical vapor deposition of high refractive index polymer films

2008 ◽  
Author(s):  
Jesse O. Enlow ◽  
Hao Jiang ◽  
Kurt G. Eyink ◽  
John T. Grant ◽  
Weijie Su ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Polymer Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Refractive Index

Low Temperature GaN Growth on Nitridated Sapphire Using Remote Plasma Enhanced Ultrahigh Vacuum Chemical Vapor Deposition

1997 ◽  
Vol 482 ◽  
Author(s):  
Dong-Jun Kim ◽  
Kyoung-Kook Kim ◽  
Jong-Sik Paek ◽  
Min-Su Yi ◽  
Do-Young Noh ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Nitridation Time ◽  
Nir Absorption

AbstractGaN epitaxial thin films were grown on a nitridated sapphire at low temperature (550°C) using remote plasma enhanced ultrahigh vacuum chemical vapor deposition system and these films were investigated by Rutherford backscattering spectroscopy (RBS), X-ray diffraction(XRD) θ-rocking technique and the Ultraviolet-Visible-Nearinfrared (UV-VIS-NIR) absorption spectrum. The FWHM of the X-ray θ-rocking curve was about 0.4 degree using the (0002) reflection from the GaN layer with 5000Å thickness grown on the nitridated sapphire. An analysis of XRD and the UV-VIS-NIR absorption spectrum showed that the crystalline and optical qualities of GaN are dependent on the nitridation time of the sapphire even at low temperature when a plasma source is used for nitridation. This means that the density of protrusion, which is formed by a relaxation of the elastic energy caused by the lattice difference between the sapphire and AlxO1-xN, with the sapphire nitridation time plays a key role in the crystalline and optical properties of grown GaN films. The RBS channeling data and the FWHM value of the θ-rocking curve for GaNr(0002) also indicated that the truncated hexagonals are tilted towards each other. These results showed that the GaN epitaxial film can be successfully grown on nitridated sapphire by RPE-UHVCVD even at low temperature.

Compatibility Study of Diamond-Like Nanocomposite Thin Films with Hydrazine Propellant for MEMS Microthruster

2009 ◽  
Vol 74 ◽  
pp. 269-272 ◽  
Author(s):  
Pijus Kundu ◽  
A. Ray Chaudhuri ◽  
S. Das ◽  
T.K. Bhattacharyya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Base Material ◽  
Chemical Vapor ◽  
Compatibility Study ◽  
Nanocomposite Thin Films ◽  
Silicon Based

In this paper, the etching characteristic of diamond like nanocomposite thin films materials in hydrazine has been reported. The experiments have been carried out to explore the compatibility of hydrazine as a propellant with silicon based microthruster. In the reported work, 2″ N-type (100) silicon wafer with 4-6 Ω cm resistivity were used as base material. Diamond-like nanocomposite (DLN) films are deposited on silicon substrate by plasma enhanced chemical vapor deposition (PECVD) process using siloxane or silazane based precursors or their combinations. Thickness of deposited DLN thin films is around 1 µm. DLN samples are treated in 98% hydrazine at 25 °C, 70 °C and 90 °C for different time and etch rates and subsequently the change in refractive index of the DLN films if any has been measured.

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