The Effect of Surface on Conductivity of PbSnTe:In/BaF2 Topological Crystalline Insulator in Space Charge Limited Current Regimes

2019 ◽  
Vol 806 ◽  
pp. 3-9
Author(s):  
Alexey Nikolaevich Akimov ◽  
Evgenij Vladimirovich Fedosenko ◽  
Alexandr Eduardovich Klimov ◽  
Denis Vyacheslavovich Ishchenko ◽  
Nikolay Sergeevich Paschin ◽  
...  
Keyword(s):  
Space Charge ◽  
Chemical Treatment ◽  
Space Charge Limited Current ◽  
Surface Chemical ◽  
Limited Current ◽  
Current Voltage ◽  
And Behavior ◽  
Topological Crystalline Insulator ◽  
Effect Of Surface ◽  
Space Charge Limited

The effect of surface chemical treatment on current-voltage (IV) characteristics of high-resistance MBE-grown PbSnTe:In films in space charge limited current (SCLC) regimes has been studied. At T=4.2 K depending on surface chemical treatment the current in films in SCLC regimes under no illumination could rise up to 104 times and even more. The surface chemical treatment also affected both the value and behavior of the photocurrent. The qualitative model for the observed phenomena has been discussed.

scholarly journals Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
N. Bano ◽  
I. Hussain ◽  
O. Nur ◽  
M. Willander ◽  
P. Klason
Keyword(s):  
Space Charge ◽  
Deep Level ◽  
Current Model ◽  
Current Transport ◽  
Space Charge Limited Current ◽  
Violet Emission ◽  
Limited Current ◽  
Current Voltage ◽  
Zno Rods ◽  
Space Charge Limited

High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as  eV and , respectively. The deep level states observed correspond to zinc interstitial ( ), responsible for the violet emission.

Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

1989 ◽  
Vol 149 ◽  
Author(s):  
J. C. Van Den Heuvel ◽  
R. C. Van Oort ◽  
B. Bokhorst ◽  
M. J. Geerts
Keyword(s):  
Space Charge ◽  
Electric Fields ◽  
Characteristic Temperature ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Frenkel Emission ◽  
High Electric Fields ◽  
Gap States ◽  
Space Charge Limited

ABSTRACTSpace Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.

Space-charge-limited current theory for a spatially non-uniform trap distribution

1978 ◽  
Vol 31 (10) ◽  
pp. 2117 ◽  
Author(s):  
JS Bonham
Keyword(s):  
Space Charge ◽  
Low Voltage ◽  
Step Function ◽  
Open Circuit ◽  
Trap Density ◽  
Asymmetric Distribution ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Space Charge Limited

The theory of space-charge-limited current, including diffusion, is discussed for an insulator containing a shallow or exponential distribution of traps whose concentration varies with position, being higher near the insulator surface than in the bulk. Two simple step- function spatial distributions are considered-one symmetric and one asymmetric. Analytic treatments are given for the open-circuit situation in both cases. For the symmetric case simple formulae are derived for the current-voltage relation. The current may be bulk- or surface-limited or there may be a transition from the former to the latter as the voltage is raised, giving rise to considerable structure in the current-voltage curves not predicted by theory which neglects diffusion. An asymmetric distribution may give rise to rectification at low voltages. This can be treated by considering the region of high trap density near one electrode to make an effectively blocking contact to the bulk of the insulator. Comparison of open-circuit potential profiles for the step-function and exponential spatial trap distributions suggests that the system is insensitive at low voltage to the nature of the spatial distribution; only the trap density in the vicinity of the surfaces is important.

Theory of space-charge-limited current with one blocking electrode

1978 ◽  
Vol 31 (10) ◽  
pp. 2103 ◽  
Author(s):  
JS Bonham ◽  
DH Jarvis
Keyword(s):  
Charge Density ◽  
Space Charge ◽  
Good Description ◽  
Constant Field ◽  
Space Charge Limited Current ◽  
Free Theory ◽  
Limited Current ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Space Charge Limited

Numerically calculated space-charge-limited current-voltage curves are presented for an insulator with one ohmic electrode (infinite injected charge density) and one blocking electrode (finite injected charge density). Charge-carrier diffusion is included, and traps in the insulator are assumed to be absent, shallow, or exponentially distributed in energy. The transition from bulk to surface limitation of the current (when the charge density is large but finite at the injecting electrode) is discussed with reference to the validity of the diffusion-free theory. A modification of the constant-field approxi- mation is shown to give a good description of the current-voltage curve when the injected charge density at the blocking electrode is small, and the current lies well below the purely space-charge-limited current which would flow if both electrodes were ohmic.

scholarly journals Influence of diffusion on space-charge-limited current measurements in organic semiconductors

2013 ◽  
Vol 4 ◽  
pp. 180-188 ◽  
Author(s):  
Thomas Kirchartz
Keyword(s):  
Space Charge ◽  
Numerical Simulations ◽  
Organic Semiconductors ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Charged Defects ◽  
Space Charge Limited

Numerical simulations of current–voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in electron-only devices and therefore lead to a reduced current that is similar to the situation where the device has a built-in voltage. This reduced current will lead to an underestimation of the mobilities and an overestimation of characteristic tail slopes if analytical equations are used to analyze the data. Correcting for the barrier created by the charged defects can, however, be a successful way to still be able to obtain reasonably accurate mobility values.

scholarly journals Эффект электроформовки в поликристаллических пленках фуллерена С-=SUB=-60-=/SUB=-

2019 ◽  
Vol 45 (4) ◽  
pp. 21
Author(s):  
И.Б. Захарова ◽  
Д.И. Долженко ◽  
В.Ф. Бородзюля ◽  
Н.Т. Сударь
Keyword(s):  
Electric Field ◽  
Space Charge ◽  
Reproducibility Of Results ◽  
Constant Electric Field ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Carrier Traps ◽  
High Degree ◽  
Space Charge Limited

AbstractLong-term exposure of a polycrystalline fullerene C_60 film in a constant electric field of 1–4 MV/cm produces an electroforming effect manifested by increase in conductivity of the film within several orders of magnitude. After this electroforming, the current–voltage ( I – U ) characteristic shows a high degree of current stability and reproducibility of results. In fields of 10^5–10^6 V/cm, the I – U characteristics of electroformed films are determined by the space-charge limited current. The concentration ( N _ t ≈ 4 × 10^21 m^–3) of carrier traps and their energy ( E _ t ≈ 0.176 eV) have been estimated.

Space-charge-limited-current conduction in heteroepitaxial 3C–SiC (111) on TiC (111)

1992 ◽  
Vol 7 (7) ◽  
pp. 1816-1821 ◽  
Author(s):  
S.H. Tan ◽  
C.P. Beetz ◽  
J.M. Carulli ◽  
B.Y. Lin ◽  
D.F. Cummings
Keyword(s):  
Space Charge ◽  
Schottky Contacts ◽  
Conduction Band Edge ◽  
Space Charge Limited Current ◽  
Electrical Measurements ◽  
Limited Current ◽  
Transmission Electron ◽  
Current Voltage ◽  
Current Conduction ◽  
Space Charge Limited

Unintentionally doped 3C–SiC (111) films were grown on TiC (111) substrates. The films were characterized by electrical measurements employing Pt Schottky contacts, optical microscopy, and transmission electron microscopy (TEM). The observed current-voltage (I-V) characteristics appear to be dominated by space-charge-limited-current (SCLC) conduction in the films. Analysis of the I-V characteristics has resulted in information pertaining to the electrically active defects in the films. These active defects are believed to be associated with stacking faults and point defects present in the films and contribute to traps at ∼0.656 eV below the conduction band edge. The concentration of traps was found to vary with film thickness and surface morphology.

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