A High Thermoelectric Performance ZT in p-Type LaSe2 Crystal

2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .

Author(s):  
Wenwu Shi ◽  
Nina Ge ◽  
Xinzhong Wang ◽  
Zhiguo Wang

Low thermal conductivity and high power factor are essential for the efficient thermoelectric materials. The lattice thermal conductivity can be reduced by reducing the dimension of materials, thus improving the...


2019 ◽  
Vol 21 (3) ◽  
pp. 1315-1323 ◽  
Author(s):  
Zhen Li ◽  
Siyu Han ◽  
Yuanchun Pan ◽  
Naihua Miao ◽  
Jian Zhou ◽  
...  

The high power factor of a p-type BST single QL is ensured by the robust multi-valley character of valence bands.


Author(s):  
Yuhong Huang ◽  
Xuanhong Zhong ◽  
Hongkuan Yuan ◽  
Hong Chen

Abstract Thermoelectric performance of MoSi2As4 monolayer is investigated using density functional theory combined with Boltzmann transport theoy. The maximal power factors of n- and p-type by PBE (HSE06) functional are 7.73 (48.31) and 32.84 (30.50) mW m-1 K-2 at the temperature of 1200 K, respectively. The lattice thermal conductivity is less than 30 W m-1 K-1 above 800 K. The thermoelectric figure of merit can reach 0.33 (0.58) and 0.90 (0.81) using PBE (HSE06) functional for n- and p-type under appropriate carrier concentration at 1200K, respectively. Thus, the p-type MoSi2As4 monolayer is predicted to be a potential candidate for high-temperature thermoelectric applications.


2016 ◽  
Vol 4 (24) ◽  
pp. 5806-5813 ◽  
Author(s):  
Lin Li ◽  
Yuan Liu ◽  
Jiyan Dai ◽  
Aijun Hong ◽  
Min Zeng ◽  
...  

A good thermoelectric material usually has a high power factor and low thermal conductivity for high figure of merit (ZT), and is also environmentally friendly and economical.


RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14415-14421
Author(s):  
Changhoon Lee ◽  
Sujee Kim ◽  
Won-Joon Son ◽  
Ji-Hoon Shim ◽  
Myung-Hwan Whangbo

The ternary selenides A2Sb4Se8 (A = K, Rb, Cs) are predicted to be a high-performance n-type thermoelectric material, and the conformationally-flexible Sb–Se(2)–Se(2)–Sb bridges are crucial in determining the thermoelectric properties of A2Sb4Se8.


Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 406
Author(s):  
Chao Li ◽  
Haili Song ◽  
Zongbei Dai ◽  
Zhenbo Zhao ◽  
Chengyan Liu ◽  
...  

Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe. Here we investigate the thermoelectric performance of GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 in Ge0.90Sb0.10Te as a result of the significant suppression in thermal conductivity while maintaining a high power factor. The maintained high power factor is due to the markable enhancement in the Seebeck coefficient, which could be attributed to the significant suppression of hole concentration and the valence band convergence upon Sb doping, while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonon scattering by lattice distortion, dislocations, and twin boundaries. The excellent thermoelectric performance of Ge0.90Sb0.10Te shows good reproducibility and thermal stability. This work confirms that Ge0.90Sb0.10Te is a superior thermoelectric material for practical application.


2021 ◽  
Author(s):  
Chao Li ◽  
Haili Song ◽  
Lei Miao ◽  
Chengqiang Cui ◽  
Chengyan Liu ◽  
...  

Abstract Lead-free and eco-friendly GeTe shows a promising candidate for mid-temperature thermoelectric application. However, a low Seebeck coefficient due to its intrinsically high holes concentration that induced by Ge vacancies, and a relatively high thermal conductivity result in an inferior thermoelectric performance of pristine GeTe. However, extrinsic atoms Sb, Bi, and Y could play a crucial role in regulating the holes concentration of GeTe because of their relatively high solubility. Here we investigate the thermoelectric performance of the GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 could be achieved in Ge 0.90 Sb 0.10 Te as a result of the significant suppression in thermal conductivity while holding a high power factor. Where the maintained high power factor is due to the markable enhancement in S , which could be attributed to the significant suppression of holes concentration and the valence band convergence upon Sb doping; while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonons scattering by the lattice distortion, dislocations, and twin boundaries. Aside from the excellent thermoelectric performance, Ge 0.90 Sb 0.10 Te also shows good reproducibility, as well as thermal stability. This work confirms the Ge 0.90 Sb 0.10 Te is a superior thermoelectric material for practical application.


Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5604
Author(s):  
Yanyan Chen ◽  
Jie Sun ◽  
Wei Kang ◽  
Qian Wang

The pentagon has been proven to be an important structural unit for carbon materials, leading to different physical and chemical properties from those of hexagon-based allotropes. Following the development from graphene to penta-graphene, a breakthrough has very recently been made for graphyne—for example, imidazole-graphyne (ID-GY) was formed by assembling experimentally synthesized pentagonal imidazole molecules and acetylenic linkers. In this work, we study the thermal properties and thermoelectric performance of ID-GY by combining first principle calculations with the Boltzmann transport theory. The calculated lattice thermal conductivity of ID-GY is 10.76 W/mK at 300 K, which is only one tenth of that of γ-graphyne (106.24 W/mK). A detailed analysis of the harmonic and anharmonic properties, including the phonon group velocity, phonon lifetime, atomic displacement parameter, and bond energy curves, reveals that the low lattice thermal conductivity can be attributed to the low Young’s modulus, low Debye temperature, and high Grüneisen parameter. Furthermore, at room temperature, ID-GY can reach a high ZT value of 0.46 with a 5.8 × 1012 cm−2 hole concentration, which is much higher than the value for many other carbon-based materials. This work demonstrates that changing structural units from hexagonal to pentagonal can significantly reduce the lattice thermal conductivity and enhance the thermoelectric performance of carbon-based materials.


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