Thermoelectric performance of MoSi(2)As(4) monolayer

2022 ◽  
Author(s):  
Yuhong Huang ◽  
Xuanhong Zhong ◽  
Hongkuan Yuan ◽  
Hong Chen
Keyword(s):  
Figure Of Merit ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Potential Candidate ◽  
Boltzmann Transport ◽  
Maximal Power ◽  
Thermoelectric Figure ◽  
Functional Theory ◽  
P Type

Abstract Thermoelectric performance of MoSi2As4 monolayer is investigated using density functional theory combined with Boltzmann transport theoy. The maximal power factors of n- and p-type by PBE (HSE06) functional are 7.73 (48.31) and 32.84 (30.50) mW m-1 K-2 at the temperature of 1200 K, respectively. The lattice thermal conductivity is less than 30 W m-1 K-1 above 800 K. The thermoelectric figure of merit can reach 0.33 (0.58) and 0.90 (0.81) using PBE (HSE06) functional for n- and p-type under appropriate carrier concentration at 1200K, respectively. Thus, the p-type MoSi2As4 monolayer is predicted to be a potential candidate for high-temperature thermoelectric applications.

A High Thermoelectric Performance ZT in p-Type LaSe2 Crystal

2021 ◽  
Vol 871 ◽  
pp. 203-207
Author(s):  
Jian Liu
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
High Power ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
High Power Factor ◽  
P Type

In this work, we use first principles DFT calculations, anharmonic phonon scatter theory and Boltzmann transport method, to predict a comprehensive study on the thermoelectric properties as electronic and phonon transport of layered LaSe2 crystal. The flat-and-dispersive type band structure of LaSe2 crystal offers a high power factor. In the other hand, low lattice thermal conductivity is revealed in LaSe2 semiconductor, combined with its high power factor, the LaSe2 crystal is considered a promising thermoelectric material. It is demonstrated that p-type LaSe2 could be optimized to exhibit outstanding thermoelectric performance with a maximum ZT value of 1.41 at 1100K. Explored by density functional theory calculations, the high ZT value is due to its high Seebeck coefficient S, high electrical conductivity, and low lattice thermal conductivity .

Thermoelectric performance of XI2 (X = Ge, Sn, Pb) bilayers

2021 ◽  
Author(s):  
Nan Lu ◽  
Jie Guan
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Transport Theory ◽  
Boltzmann Transport ◽  
Functional Theory ◽  
Boltzmann Transport Theory ◽  
Dimensionless Figure Of Merit ◽  
Structure Calculations

Abstract We study the thermal and electronic transport properties as well as the TE performance of three two-dimensional XI2 (X = Ge, Sn, Pb) bilayers using density functional theory and Boltzmann transport theory. We compared the lattice thermal conductivity, electrical conductivity, Seebeck coefficient, and dimensionless figure of merit (ZT) for the XI2 monolayers and bilayers. Our results show that the lattice thermal conductivity at room temperature for the bilayers is as low as ~1.1-1.7 Wm-1K-1, which is about 1.6 times as large as the monolayers for all the three materials. Electronic structure calculations show that all the XI2 bilayers are indirect-gap semiconductors with the band gap values between 1.84 eV and 1.96 eV at PBE level, which is similar as the corresponding monolayers. The calculated results of ZT show that the bilayer structures display much less direction dependent TE efficiency and have much larger n-type ZT values compared with the monolayers. The dramatic difference between the monolayer and bilayer indicates that the inter-layer interaction plays an important role in the TE performance of XI2, which provides the tunability on their TE characteristics.

scholarly journals Enhanced mechanism of thermoelectric performance of Bi2Se3 using density functional theory

2020 ◽  
Vol 9 (3) ◽  
Author(s):  
Muhammad Zamir Mohyedin ◽  
Mohamad Fariz Mohamad Taib ◽  
Afiq Radzwan ◽  
M. Mustaffa ◽  
Amiruddin Shaari ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Effective Mass ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
Power Factor ◽  
Figure Of Merit ◽  
Density Functional ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Functional Theory

Abstract Good thermoelectric performance is being sought to face major problems related to energy, especially in the concern of the usage of energy on environmental impact. In this work, we investigate the underlying mechanism to enhance the thermoelectric performance of bismuth selenide (Bi2Se3) by employing density functional theory (DFT) followed by the Boltzmann transport equation under relaxation time approximation. The structural, electronic, and thermoelectric properties were calculated and analyzed. From the analysis of combined results of thermoelectric properties and electronic properties as the function of the Fermi level, we found that the power factor of Bi2Se3 is improved by increasing electrical conductivity that contributed by the large density of states and light effective mass of charge carriers. The figure of merit, on the other hand, is enhanced by increasing Seebeck coefficient that contributed by heavy effective mass and decreasing thermal conductivity that contributed by low density of states. We also found that both power factor and figure of merit can be improved through n-type doping at 300 K and p-type doping at higher temperature (400 K and 500 K).

scholarly journals Ultralow lattice thermal conductivity of chalcogenide perovskite CaZrSe3 contributes to high thermoelectric figure of merit

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Eric Osei-Agyemang ◽  
Challen Enninful Adu ◽  
Ganesh Balasubramanian
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Mean Free Path ◽  
Thermoelectric Figure Of Merit ◽  
Boltzmann Transport ◽  
Phonon Modes ◽  
Thermoelectric Figure

AbstractAn emerging chalcogenide perovskite, CaZrSe3, holds promise for energy conversion applications given its notable optical and electrical properties. However, knowledge of its thermal properties is extremely important, e.g. for potential thermoelectric applications, and has not been previously reported in detail. In this work, we examine and explain the lattice thermal transport mechanisms in CaZrSe3 using density functional theory and Boltzmann transport calculations. We find the mean relaxation time to be extremely short corroborating an enhanced phonon–phonon scattering that annihilates phonon modes, and lowers thermal conductivity. In addition, strong anharmonicity in the perovskite crystal represented by the Grüneisen parameter predictions, and low phonon number density for the acoustic modes, results in the lattice thermal conductivity to be limited to 1.17 W m−1 K−1. The average phonon mean free path in the bulk CaZrSe3 sample (N → ∞) is 138.1 nm and nanostructuring CaZrSe3 sample to ~10 nm diminishes the thermal conductivity to 0.23 W m−1 K−1. We also find that p-type doping yields higher predictions of thermoelectric figure of merit than n-type doping, and values of ZT ~0.95–1 are found for hole concentrations in the range 1016–1017 cm−3 and temperature between 600 and 700 K.

scholarly journals Strain Effects on the Electronic and Thermoelectric Properties of n(PbTe)-m(Bi2Te3) System Compounds

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4086
Author(s):  
Weiliang Ma ◽  
Marie-Christine Record ◽  
Jing Tian ◽  
Pascal Boulet
Keyword(s):  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Compressive Strain ◽  
Van Der Waals Interactions ◽  
Functional Theory ◽  
Band Engineering ◽  
Seebeck Coefficients ◽  
The Density Functional Theory ◽  
P Type ◽  
Narrow Band Gap Semiconductors

Owing to their low lattice thermal conductivity, many compounds of the n(PbTe)-m(Bi2Te3) homologous series have been reported in the literature with thermoelectric (TE) properties that still need improvement. For this purpose, in this work, we have implemented the band engineering approach by applying biaxial tensile and compressive strains using the density functional theory (DFT) on various compounds of this series, namely Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5. All the fully relaxed Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5 compounds are narrow band-gap semiconductors. When applying strains, a semiconductor-to-metal transition occurs for all the compounds. Within the range of open-gap, the electrical conductivity decreases as the compressive strain increases. We also found that compressive strains cause larger Seebeck coefficients than tensile ones, with the maximum Seebeck coefficient being located at −2%, −6%, −3% and 0% strain for p-type Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5, respectively. The use of the quantum theory of atoms in molecules (QTAIM) as a complementary tool has shown that the van der Waals interactions located between the structure slabs evolve with strains as well as the topological properties of Bi2Te3 and PbBi2Te4. This study shows that the TE performance of the n(PbTe)-m(Bi2Te3) compounds is modified under strains.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

Thermoelectric Transport Properties of SrTiO3 Doped with Pm

2018 ◽  
Vol 280 ◽  
pp. 3-8 ◽  
Author(s):  
A. A. Adewale ◽  
Abdullah Chik ◽  
R. Mohd Zaki ◽  
F. Che Pa ◽  
Yeoh Chow Keat ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Density Functional ◽  
Generalized Gradient ◽  
Thermoelectric Figure ◽  
Functional Theory ◽  
Thermoelectric Transport ◽  
Generalized Gradient Approximation ◽  
High Contribution ◽  
Thermoelectric Transport Properties

Thermoelectric properties of SrTiO3doped with 8%Pm at Sr site were investigated using density functional theory and generalized gradient approximation. The transport properties were calculated based on BoltzTraP code at temperature range 300-1200K. In electronic properties study Fermi level were shifted to conduction band region due to high contribution 4f orbital in Pm. Present study thermoelectric figure of merit ZT result was 0.395 at 300K and 0.638 at 1200K. This shows a considerably good value of ZT for SrTiO3as n-type oxide. Compared to previous work, ZT were at the range of 0.21 - 0.37 for temperature of 300-1000K in Pr, La, Ta and Ho.

Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

2015 ◽  
Vol 08 (02) ◽  
pp. 1550028 ◽  
Author(s):  
Qilong Guo ◽  
Sijun Luo
Keyword(s):  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Zn Deficiency ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
Pristine Sample ◽  
Zn Content ◽  
P Type ◽  
Content Regulation

We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of ~ 0.8 at 700 K which is a ~ 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb -based material have been discussed.

scholarly journals Ultralow and anisotropic thermal conductivity in semiconductor As2Se3

2018 ◽  
Vol 20 (3) ◽  
pp. 1809-1816 ◽  
Author(s):  
Robert L. González-Romero ◽  
Alex Antonelli ◽  
Anderson S. Chaves ◽  
Juan J. Meléndez
Keyword(s):  
Thermal Conductivity ◽  
Density Functional Theory ◽  
First Principles ◽  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Boltzmann Transport Equation ◽  
First Principles Calculations ◽  
Boltzmann Transport ◽  
Functional Theory ◽  
Anisotropic Thermal Conductivity

An ultralow lattice thermal conductivity of 0.14 W m−1 K−1 along the b⃑ axis of As2Se3 single crystals was obtained at 300 K by first-principles calculations involving density functional theory and the resolution of the Boltzmann transport equation.

Thermal Conductivity of Zn4−xCdxSb3 Solid Solutions

1997 ◽  
Vol 478 ◽  
Author(s):  
T. Caillat ◽  
A. Borshchevsky ◽  
J. -P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
State Of The Art ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Jet Propulsion ◽  
P Type ◽  
Electrical Conductors

Abstractβ-Zn4Sb3 was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy β-Zn4Sb3 with isostructural compounds because of the expected decrease in lattice thermal conductivity. We have grown Zn4−xCdxSb3 crystals with 0.2≤x<1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn4−xCdxSb3 alloys are significantly lower than those measured for β-Zn4Sb3 and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

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