Electric Power Sources Based on the Seebeck Effect of Manganese Sulfides with Rare Earth Substitution

2022 ◽  
Vol 1049 ◽  
pp. 167-173
Author(s):  
A.M. Kharkov ◽  
Maxim N. Sitnikov ◽  
Vasily Kretinin ◽  
Hichem Abdelbaki ◽  
Fedor Zelenov ◽  
...  

The thermoelectric properties of compounds with variable valence Mn1-ХReХS (0 ≤ X ≤ 0.2) in the temperature range of (80 – 1100) K are studied. The maxima on the temperature dependences of the Seebeck coefficient (thermal EMF) for all substitution concentrations and the change of the sign of the Seebeck coefficient from positive to negative with an increase in the substitution concentration in Mn1-XYbXS are determined. A model of impurity donor 4f-states is proposed and a satisfactory agreement with the data on the thermal EMF is obtained.

2004 ◽  
Vol 848 ◽  
Author(s):  
Y. Sugiura ◽  
S. Horii ◽  
T. Kumagai ◽  
T. Okamoto ◽  
K. Otzschi ◽  
...  

ABSTRACTWe report the synthesis and thermoelectric properties of [(Ca1-xREx)2CoO3-δ]0.62CoO2 compounds (RE: rare earth element, RE = Y, Sm, Eu, Tb, Dy, Ho and Lu). From optimization of synthesis conditions, all the chosen RE in this study were able to be substituted for the Ca sites in the block layers up to x = 0.25. In the case of RE = Tb, at 1150 K, only κ was systematically decreased with x, while both Seebeck coefficient (S) and resistivity (ρ) were almost constant for the charge of x. Consequently, the dimensionless figure of merit (ZT) was increased with x and reached 0.2 at 1150 K for x = 0.25. Moreover, interestingly, it was found that S and ρ at 300 K were enhanced with ionic radius of the doped trivalent RE ions in spite of the doping of equivalent RE ions. This is probably because local structures of oxygen sites around Co ion in the CoO2 layers largely depend on kinds of the doped RE.


2018 ◽  
Vol 6 (31) ◽  
pp. 8479-8487 ◽  
Author(s):  
Huijun Kang ◽  
Jinling Li ◽  
Yinqiao Liu ◽  
Enyu Guo ◽  
Zongning Chen ◽  
...  

Herein, we propose for the first time a novel recipe to improve the thermoelectric properties of BiCuSeO by doping with variable valence elements.


2003 ◽  
Vol 328 (1-2) ◽  
pp. 44-48 ◽  
Author(s):  
Ya. Mudryk ◽  
P. Rogl ◽  
C. Paul ◽  
S. Berger ◽  
E. Bauer ◽  
...  

2018 ◽  
Author(s):  
T.A. Konev ◽  
V.A. Kuzmin ◽  
E. Yu. Mutovina ◽  
R.D. Puzhaykin ◽  
Vladimir Salomatov

Chemical sources of current are investigated as lines with distributed parameters. Analytical expressions are obtained for the voltage and active power values of the source at different distances from the beginning of the cell as well as dependences of the working voltage and active power on the source length. Effects of a reduction in the operating voltage and active power are due to the flow of electric current along the source during operation. The magnitude of these effects depends not only on the length of the source, but also on the ratio of characteristic resistance to the load resistance.<br>


2004 ◽  
Author(s):  
Ronald N. Kostoff ◽  
Rene Tshiteya ◽  
Kirstin M. Pfeil ◽  
James A. Humenik ◽  
George Karypis

2014 ◽  
Vol 32 (4) ◽  
pp. 376-382 ◽  
Author(s):  
Sh. Rasekh ◽  
G. Constantinescu ◽  
M. A. Torres ◽  
J. C. Diez ◽  
M. A. Madre ◽  
...  

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.


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