Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

2002 ◽  
Vol 389-393 ◽  
pp. 1277-1280 ◽  
Author(s):  
Martin Domeij ◽  
H. Brünahl ◽  
Mikael Östling
Keyword(s):  
High Voltage ◽  
Device Simulation ◽  
Avalanche Breakdown

Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates

2001 ◽  
Vol 32 (5-6) ◽  
pp. 473-479 ◽  
Author(s):  
D Dragomirescu ◽  
G Charitat
Keyword(s):  
High Voltage ◽  
Avalanche Breakdown

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS

2004 ◽  
Vol 14 (03) ◽  
pp. 865-871 ◽  
Author(s):  
Lin Zhu ◽  
Peter Losee ◽  
T. Paul Chow
Keyword(s):  
Optimal Design ◽  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Avalanche Breakdown ◽  
Schottky Rectifiers ◽  
Design Tradeoffs ◽  
Schottky Rectifier ◽  
Avalanche Breakdown Voltage

This paper presents a novel Schottky rectifier structure based on the superjunction approach, which is utilizes 2- and 3-D field shaping to increase the avalanche breakdown voltage. Device forward and blocking characteristics are analyzed with numerical simulations and compared with conventional 4 H - SiC Schottky rectifiers. Optimal design tradeoffs between breakdown voltage and specific on-resistance are obtained for high voltage 4 H - SiC superjunction Schottky rectifiers. The results show that the new structure can provide a 20 × lower R on,sp than conventional Schottky rectifier for 6kV device. In addition, device termination and possible fabrication steps for the superjunction devices are also presented.

High-Voltage Stacked Diode Package

2015 ◽  
Vol 2015 (1) ◽  
pp. 000225-000230 ◽  
Author(s):  
Lauren Boteler ◽  
Alexandra Rodriguez ◽  
Miguel Hinojosa ◽  
Damian Urciuoli
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Recovery Time ◽  
Load Test ◽  
Avalanche Breakdown ◽  
Electric Force ◽  
Inductive Load ◽  
Turn On ◽  
Series Configuration ◽  
Reverse Recovery Time

The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.

Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes

2018 ◽  
Vol 52 (12) ◽  
pp. 1630-1634 ◽  
Author(s):  
P. A. Ivanov ◽  
T. P. Samsonova ◽  
A. S. Potapov
Keyword(s):  
High Voltage ◽  
Avalanche Breakdown

scholarly journals Two-Dimensional Device Simulation of High-Voltage Lateral DMOSFETS

1987 ◽  
Vol 1987-13 (1) ◽  
pp. 318-327
Author(s):  
Richard K. Williams
Keyword(s):  
High Voltage ◽  
Device Simulation ◽  
Two Dimensional

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

2018 ◽  
Vol 924 ◽  
pp. 568-572 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Voltage Drop ◽  
Device Simulation ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Ultra High Voltage

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

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