Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
2018 ◽
Vol 924
◽
pp. 568-572
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Keyword(s):
Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.
2017 ◽
Vol 897
◽
pp. 423-426
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Keyword(s):
2020 ◽
Vol 1004
◽
pp. 911-916
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Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 855-858
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Keyword(s):
2017 ◽
Vol 897
◽
pp. 427-430
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Keyword(s):
Keyword(s):
2001 ◽
Vol 45
(7)
◽
pp. 1085-1089
◽
2014 ◽
Vol 778-780
◽
pp. 1038-1041
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