Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

2005 ◽  
Vol 475-479 ◽  
pp. 1693-1696 ◽  
Author(s):  
Jian Dong Ye ◽  
Shu Lin Gu ◽  
Su Min Zhu ◽  
S.M. Liu ◽  
Feng Qin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Growth Time ◽  
Zno Films ◽  
Morphology Evolution ◽  
Island Growth ◽  
X Ray ◽  
Mocvd Growth ◽  
Atomic Force ◽  
Surface Morphology Evolution

The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing

Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

2005 ◽  
pp. 1693-1696
Author(s):  
Jian Dong Ye ◽  
Shu Lin Gu ◽  
Su Min Zhu ◽  
S.M. Liu ◽  
Feng Qin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Morphology Evolution ◽  
Mocvd Growth ◽  
Surface Morphology Evolution

Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing

2021 ◽  
Vol 42 (06) ◽  
pp. 810-817
Author(s):  
Jia-en SUI ◽  
◽  
Jian-wei BEN ◽  
Hang ZANG ◽  
Ke JIANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Morphology Evolution ◽  
High Temperature Annealing ◽  
Surface Morphology Evolution

In situ investigation of the surface morphology evolution of the bulk ceramic Y2Mo3O12 during crystal water release

2015 ◽  
Vol 17 (16) ◽  
pp. 10363-10368 ◽  
Author(s):  
Y. G. Cheng ◽  
X. S. Liu ◽  
H. J. Chen ◽  
M. J. Chao ◽  
E. J. Liang
Keyword(s):  
Surface Morphology ◽  
Morphology Evolution ◽  
Water Release ◽  
Crystal Water ◽  
Force Microscopy ◽  
Bulk Ceramic ◽  
Atomic Force ◽  
In Situ Investigation ◽  
Surface Morphology Evolution

The surface morphology evolution of the bulk ceramic Y2Mo3O12 during the release of crystal water is followed in situ for the first time using atomic force microscopy.

Investigations of ZnO Nanorod Films Grown by Hydrothermal Method for Ethanol Gas Sensor

2020 ◽  
Vol 19 (03) ◽  
pp. 1950022
Author(s):  
S. Jainulabdeen ◽  
C. Gopinathan ◽  
A. Mumtaz Parveen ◽  
K. Mahalakshmi ◽  
K. Jeyadheepan ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Grazing Incidence ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ethanol Sensing ◽  
Zno Rods

Rod-structured ZnO has grown hydrothermally on the seed layer by varying growth time. The growth mechanism of rod-structured ZnO thin films is studied extensively with the help of characterizing tools. The preferred orientation and c/a ratio are studied with Grazing Incidence X-ray diffraction (GIXRD). The growth mechanism of ZnO rod structure is studied in detailed manner with Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The optical absorption and emission properties of ZnO rods are studied with respect to growth morphology. Ethanol sensing measurements are carried out at room temperature (RT). The nanostructured ZnO films show good response and sensitivity to ethanol gas at RT.

Real-time x-ray scattering study of surface morphology evolution during ion erosion and epitaxial growth of Au(111)

1999 ◽  
Vol 60 (24) ◽  
pp. 16956-16964 ◽  
Author(s):  
M. V. Ramana Murty ◽  
T. Curcic ◽  
A. Judy ◽  
B. H. Cooper ◽  
A. R. Woll ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Real Time ◽  
Morphology Evolution ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Study ◽  
Ion Erosion ◽  
Surface Morphology Evolution ◽  
Ray Scattering

Nucleation and surface morphology evolution of ferroelectric SrBi2Ta2O9 films studied by atomic force microscopy

1998 ◽  
Vol 405 (2-3) ◽  
pp. L554-L560 ◽  
Author(s):  
Q.D Jiang ◽  
Z.J Huang ◽  
P Jin ◽  
C.L Chen ◽  
A Brazdeikis ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Morphology Evolution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphology Evolution

scholarly journals The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 188
Author(s):  
Lin Shang ◽  
Bingshe Xu ◽  
Shufang Ma ◽  
Qingming Liu ◽  
Huican Ouyang ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Surface Morphology ◽  
Annealing Time ◽  
Crystal Quality ◽  
Morphology Evolution ◽  
Nucleation Layer ◽  
Atomic Force ◽  
Low Dislocation Density ◽  
Surface Morphologies ◽  
Surface Morphology Evolution

The surface morphology evolution of GaN nucleation layer (NL) after different annealing time has been investigated by atomic force microscope. The surface morphologies of GaN NL after different annealing time are island-like. It is observed that for 0-min annealing time sample nucleation islands (NIs) are high density and small in size which results in high dislocation density GaN films, while the samples with longer annealing time have low density and large size NIs which results in low dislocation density GaN films. The crystal structure of GaN NLs after different annealing time investigated by high-resolution X-ray diffraction indicates GaN NL is polycrystalline. During annealing, GaN nanocrystals misaligned with sapphire gradually disappear and GaN nanocrystals aligned with sapphire survive and grow up. Thus, the GaN NL surface has different NIs’ densities and sizes after different annealing time. The NL annealing time can effectively control the density and size of the NIs and further determine the GaN films crystal quality.

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