Investigations of ZnO Nanorod Films Grown by Hydrothermal Method for Ethanol Gas Sensor

2020 ◽  
Vol 19 (03) ◽  
pp. 1950022
Author(s):  
S. Jainulabdeen ◽  
C. Gopinathan ◽  
A. Mumtaz Parveen ◽  
K. Mahalakshmi ◽  
K. Jeyadheepan ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Grazing Incidence ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ethanol Sensing ◽  
Zno Rods

Rod-structured ZnO has grown hydrothermally on the seed layer by varying growth time. The growth mechanism of rod-structured ZnO thin films is studied extensively with the help of characterizing tools. The preferred orientation and c/a ratio are studied with Grazing Incidence X-ray diffraction (GIXRD). The growth mechanism of ZnO rod structure is studied in detailed manner with Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The optical absorption and emission properties of ZnO rods are studied with respect to growth morphology. Ethanol sensing measurements are carried out at room temperature (RT). The nanostructured ZnO films show good response and sensitivity to ethanol gas at RT.

Stress-Depth Profiles in Magnetron Sputtered Mo Films Using Grazing Incidence X-Ray Diffraction (GIXD)

1993 ◽  
Vol 37 ◽  
pp. 189-196 ◽  
Author(s):  
B. L. Ballard ◽  
P. K. Predecki ◽  
D. N. Braski
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Vycor Glass ◽  
X Ray ◽  
Force Microscopy ◽  
Fine Grained ◽  
Atomic Force ◽  
Grazing Incidence Diffraction ◽  
Composition Profiles ◽  
Deposition Mode

AbstractIntrinsic stresses as a function of σ, the 1/e penetration depth were measured for a smooth, 1μm thick, fine grained, cylindrical post magnetron sputtered molybdenum film deposited on a vycor glass substrate in the dynamic deposition mode. Using grazing incidence diffraction and the Mo (321) reflection, lattice spacing profiles were determined for τ values from 200-4400 Å. The in-plane intrinsic stresses parallel and perpendicular to the post axis were determined employing the ϕ-integral method and assuming elastic isotropy. The results were related to the surface structure and composition profiles via atomic force microscopy (AFM) and auger electron spectroscopy (AES) respectively.

Surface Morphology of InxGa1-xAs/GaAs Relaxed Layers Characterized by Atomic Force Microscopy

1994 ◽  
Vol 340 ◽  
Author(s):  
G. Padeletti ◽  
G. M. Ingo ◽  
P. Imperatori
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Strain Relaxation ◽  
Grazing Incidence ◽  
Dislocation Network ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Combined Use

ABSTRACTGa0.65In0.35As layers of a varying nominal epilayer thickness (10 – 1000 nm) have been grown by the MBE technique on GaAs (100) substrates and characterized by the combined use of atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXD). The surface roughness and morphology have been investigated. The GIXD and AFM results show that the thinnest films are characterized by an asymmetric strain relaxation along the two <110> directions with no surface crosshatched pattern but with a misfit dislocation network. AFM images on the thickest films show also well-oriented protrusions along the [110] direction, which increase in size and become more elongated as the nominal film thickness increases.

Characterization of Ultra-Thin PtSi Films for Infrared Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
P. Roussel ◽  
S. Kolodinski ◽  
A. Torres ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Annealing Process ◽  
Deposition Techniques

AbstractTransmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

Synthesis and Morphology of ZnO Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 307 ◽  
pp. 333-336
Author(s):  
Shiuh Chuan Her ◽  
Tsung Chi Chi
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Zinc oxide (ZnO) thin films were deposited on glass substrate by Radio frequency (RF) magnetron sputtering. The effect of substrate temperature on the microstructure of the ZnO films has been investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature.

Development of a high-growth rate 3C-SiC on Si CVD process

2006 ◽  
Vol 911 ◽  
Author(s):  
M. Reyes ◽  
Y. Shishkin ◽  
S. Harvey ◽  
S. E. Saddow
Keyword(s):  
Growth Rate ◽  
Mole Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Hydrogen Gas ◽  
Growth Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

AbstractGrowth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS GROWN ON FLEXIBLE POLYIMIDE SUBSTRATES

2007 ◽  
Vol 14 (04) ◽  
pp. 801-805 ◽  
Author(s):  
DONG ICK SON ◽  
JUNG WOOK LEE ◽  
DEA UK LEE ◽  
TAE WHAN KIM ◽  
WON KOOK CHOI
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diffraction Patterns ◽  
Microscopy Images

Nominally undoped ZnO thin films were grown on polyimide (PI) substrates at various temperatures by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the root mean squares of the average surface roughnesses for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 4.08, 4.50, 4.18, and 3.89 nm, respectively. X-ray diffraction patterns showed that the crystallinity of the ZnO films had a preferential (0001) direction and that the full width at half-maxima for the (0002) ZnO diffraction peak for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 0.22, 0.22, 0.22, and 0.23, respectively. The average optical transmittances in the visible ranges between 550 and 750 nm for the ZnO /PI heterostructures grown at 27°C, 100°C, 200°C, and 300°C were 87%, 83%, 87%, and 78%, respectively.

Ultra-Smooth ZnO Buffer Layers on (001) Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
A. J. Drehman ◽  
S.-Q. Wang ◽  
P. W. Yip
Keyword(s):  
Buffer Layers ◽  
Zno Films ◽  
Potential Candidate ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Electrical Resistivities

AbstractUsing off-axis reactive rf sputtering, we have grown extremely smooth, nearly epitaxial, (001) oriented ZnO films on c-axis sapphire substrates. Atomic Force Microscopy was used to determine that these films are extremely smooth, having an rms roughness of only a few tenths of a nanometer. Based on high resolution x-ray diffraction (HXRD), the ZnO is highly oriented, with a rocking curve width of less than 400 arc seconds for the (006) diffraction peak, and only somewhat larger for the (112) reflection. HXRD Phi scans show that the ZnO (112) reflection is rotated in the a-b plane by 30 degrees from the sapphire (113) direction. These two measurements indicate excellent in-plane orientation. We are investigating the use of these buffer layers for subsequent GaN growth. Electrical resistivities of the films exceeded 100 kΩ-cm making ZnO a potential candidate as an insulating buffer layer.

Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD

2005 ◽  
Vol 901 ◽  
Author(s):  
Torben Clausen ◽  
Jan-Ingo Flege ◽  
Thomas Schmidt ◽  
Jens Falta
Keyword(s):  
Strain State ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

AbstractWe have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films have been determined by the use of scanning electron microscopy, atomic force microscopy and grazing incidence x-ray diffraction. After growth at temperatures between 500°C and 600°C smooth Ge films have been observed, which show a partial strain relaxation. However, increasing the temperature to 700°C, a rough surface with a high density of three-dimensional islands has been found.

Sign in / Sign up

Export Citation Format

Share Document