Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals
2005 ◽
Vol 483-485
◽
pp. 273-276
◽
Keyword(s):
X Band
◽
The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and AB//[001]=48G and superhyperfine (SHF) interaction with three equivalent Si neighbour atoms and TB//[001]=12.4G, allow us to attribute the center to a sp3 coordinated carbon dangling bond center, PbC.
2005 ◽
pp. 273-276
Keyword(s):
2006 ◽
Vol 61
(12)
◽
pp. 683-687
◽
1977 ◽
Vol 32
(9)
◽
pp. 1068-1069
◽
1996 ◽
Vol 51
(8)
◽
pp. 885-894
◽
2006 ◽
Vol 527-529
◽
pp. 1015-1018
◽
1980 ◽
Vol 35
(12)
◽
pp. 1308-1312
◽
2007 ◽
Vol 11
(07)
◽
pp. 531-536
◽
1997 ◽
Vol 52
(11)
◽
pp. 765-770
◽