Substrate Bias Effects on the Structure of the Film by a Hybrid PVD and Plasma-Based Ion Implantation Process

2005 ◽  
Vol 486-487 ◽  
pp. 452-455
Author(s):  
S.Y. Chun ◽  
Sang Jin Lee

This paper descirbes the characteristics of gold films prepared by a hybrid plasma based an ion implantation/deposition (PBIID) system. The surface morphology and structure of the film were affected by the voltage applied to the target. With increasing negative voltage, the surface became thinner with a lesser number of nuclei. The grain structure varied from the continuous film at 0 kV to the channel at -1 kV, and further to the islands (mounds) at -5 kV. The ions in the sheath are believed to play an important role in the deposition of the film.

2004 ◽  
Vol 548 (1-3) ◽  
pp. 333-341 ◽  
Author(s):  
T. Suzuki ◽  
Y. Temko ◽  
M.C. Xu ◽  
K. Jacobi

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.


1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.


Vacuum ◽  
2007 ◽  
Vol 82 (2) ◽  
pp. 154-157 ◽  
Author(s):  
M. Marton ◽  
T. Ižák ◽  
M. Veselý ◽  
M. Vojs ◽  
M. Michalka ◽  
...  

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