Characteristics of SnOx-Coated Lithium Manganese Oxide Thin Film for MEMS Power System

2005 ◽  
Vol 486-487 ◽  
pp. 562-565
Author(s):  
Jae Ho Lee ◽  
Young Jae Kim ◽  
Hee Soo Moon ◽  
Jong Wan Park
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Spinel Phase ◽  
Interface Reaction ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Spinel Type ◽  
System A ◽  
Layer Thin Film ◽  
Sputtering System

We prepared spinel-phase LiMn2O4 layer by using rf magnetron sputtering system. LiMn2O4 films were deposited at room temperature and then annealed at 750°C for crystallization to spinel type. In order to reduce the interface reaction such as Mn dissolution phenomenon during operation, we introduced SnOx (coating-layer) thin film. The SnOx films were deposited on LiMn2O4 films by rf magnetron sputtering system. A SnOx-coated LiMn2O4 film was more stable during the chargingdischarging reaction and maintained good cycle behavior at high temperature conditions of 55°C.

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas

Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

2017 ◽  
Vol 53 (10) ◽  
pp. 1634-1637 ◽  
Author(s):  
Chia-Ching Wu ◽  
Wei-Chen Shih
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nickel Oxide ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Glass Substrates ◽  
Triple Layer ◽  
Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

Titanium oxide thin film deposited on metallic Cr substrate by RF-magnetron sputtering

2007 ◽  
Vol 61 (16) ◽  
pp. 3440-3442 ◽  
Author(s):  
Sang Hun Lee ◽  
Kee-Sun Lee ◽  
Jeong Hwan Kim
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Titanium Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film

Characteristics of HfO2 Thin Film Capacitor Deposited by RF Magnetron Sputtering

2021 ◽  
Vol 16 (6) ◽  
pp. 919-925
Author(s):  
Yang Gyu Bak ◽  
Ji Woon Park ◽  
Hee Young Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Mos Capacitor

High-k HfO2 thin films were assessed as a gate dielectric for possible oxide thin-film transistor applications. A HfO2 gate dielectric layer was deposited by radio frequency magnetron sputtering (RF-MS) of a sintered ceramic target at the working pressure of 5 mTorr and annealed at various annealing conditions. X-ray diffraction (XRD) and UV-Vis transmission spectroscopy were carried out to determine the structure and optical transparency of the sputtered HfO2 films, respectively. The electrical characteristics of the HfO2 films were evaluated using the metal-oxide-semiconductor (MOS) capacitor structure of Ti/HfO2/n++-Si. The capacitance-voltage (C-V) and current-voltage (I-V) measurements were taken using an impedance analyzer (Keysight, E4990A) and semiconductor parameter analyzer (Keithley, 4200-SCS), respectively. A dielectric constant of up to 8 with a leakage current as low as 1.0 × 10−9 A/cm2 at 2.0 V were observed.

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