Characteristics of HfO2 Thin Film Capacitor Deposited by RF Magnetron Sputtering

High-k HfO2 thin films were assessed as a gate dielectric for possible oxide thin-film transistor applications. A HfO2 gate dielectric layer was deposited by radio frequency magnetron sputtering (RF-MS) of a sintered ceramic target at the working pressure of 5 mTorr and annealed at various annealing conditions. X-ray diffraction (XRD) and UV-Vis transmission spectroscopy were carried out to determine the structure and optical transparency of the sputtered HfO2 films, respectively. The electrical characteristics of the HfO2 films were evaluated using the metal-oxide-semiconductor (MOS) capacitor structure of Ti/HfO2/n++-Si. The capacitance-voltage (C-V) and current-voltage (I-V) measurements were taken using an impedance analyzer (Keysight, E4990A) and semiconductor parameter analyzer (Keithley, 4200-SCS), respectively. A dielectric constant of up to 8 with a leakage current as low as 1.0 × 10−9 A/cm2 at 2.0 V were observed.

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Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering

Chinese Journal of Luminescence ◽

10.3788/fgxb20123310.1149 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1149-1152 ◽

Cited By ~ 1

Author(s):

信恩龙 XIN En-long ◽

李喜峰 LI Xi-feng ◽

陈龙龙 CHEN Long-long ◽

石继锋 SHI Ji-feng ◽

李春亚 LI Chun-ya ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Magnetron Sputtering ◽

Thin Film Transistor ◽

Rf Magnetron Sputtering ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y2O3 Gate Dielectric

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18924 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1748-1753

Author(s):

Inas M. Jauhari ◽

Yang-Gyu Bak ◽

Imas Noviyana ◽

Maryane A. Putri ◽

Jung-A Lee ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Subthreshold Swing ◽

Oxide Thin Film ◽

Working Pressure ◽

Bias Stress ◽

Annealing Conditions ◽

Zinc Tin Oxide

High-k Y2O3 thin films were investigated as the gate dielectric for amorphous indium zinc tin oxide (IZTO) thin-film transistors (TFTs). Y2O3 gate dielectric was deposited by radio frequency magnetron sputtering (RF-MS) under various working pressures and annealing conditions. Amorphous IZTO TFTs with SiO2 as the gate dielectric showed a high field-effect mobility (μFE) of 19.6 cm2/Vs, threshold voltage (Vth) of 0.75 V, on/off current ratio (Ion/Ioff) of 2.0×106, and subthreshold swing (SS) value of 1.01 V/dec. The IZTO TFT sample device fabricated with the Y2O3 gate dielectric showed an improved subthreshold swing value compared to that of the IZTO TFT device with SiO2 gate dielectric. The IZTO TFT device using the Y2O3 gate dielectric deposited at a working pressure of 5 mtorr and annealed at 400 °C in 6 sccm O2 for 1 hour showed a high μFE of 51.8 cm2/Vs, Vth of −0.26 V, Ion/Ioff of 6.0×103, and SS value of 0.19 V/dec. With the application of a Y2O3 gate dielectric, the Vth shift improved under a positive bias stress (PBS) but was relatively unaffected by negative bias stress (NBS). These shifts were attributed to charge traps within the gate dielectric and/or interfaces between the channel and gate dielectric layer.

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Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.9b04045 ◽

2019 ◽

Vol 123 (33) ◽

pp. 20278-20286 ◽

Cited By ~ 6

Author(s):

Anand Sharma ◽

Nitesh K. Chourasia ◽

Nila Pal ◽

Sajal Biring ◽

Bhola N. Pal

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film ◽

Ion Conducting ◽

Electron Donation

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Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

Applied Physics Letters ◽

10.1063/1.1553997 ◽

2003 ◽

Vol 82 (7) ◽

pp. 1117-1119 ◽

Cited By ~ 905

Author(s):

P. F. Carcia ◽

R. S. McLean ◽

M. H. Reilly ◽

G. Nunes

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Thin Film Transistor ◽

Rf Magnetron Sputtering ◽

Zno Thin Film

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Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

Journal of University of Shanghai for Science and Technology ◽

10.51201/jusst/21/09680 ◽

2021 ◽

Vol 23 (09) ◽

pp. 1078-1085

Author(s):

A. Kanni Raj ◽

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Gate Dielectric ◽

Dielectric Material ◽

Thin Film Transistor ◽

Sol Gel ◽

Oxide Thin Film ◽

Barium Zirconate ◽

Operating Voltage ◽

Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

E3S Web of Conferences ◽

10.1051/e3sconf/20185301008 ◽

2018 ◽

Vol 53 ◽

pp. 01008

Author(s):

Feihu Tan ◽

XiaoPing Liang ◽

Feng Wei ◽

Jun Du

Keyword(s):

Thin Film ◽

Thin Films ◽

Solid State ◽

Magnetron Sputtering ◽

Specific Capacity ◽

Rf Magnetron Sputtering ◽

Open Circuit ◽

Working Pressure ◽

Thin Film Battery ◽

A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

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