Resistive Switching Characteristics and Failure Analysis of TiO[sub 2] Thin Film Deposited by RF Magnetron Sputtering System

2011 ◽  
Vol 158 (2) ◽  
pp. H178 ◽  
Author(s):  
Ho Yong Jung ◽  
Sang Chul Oh ◽  
Heon Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Failure Analysis ◽  
Resistive Switching ◽  
Rf Magnetron Sputtering ◽  
Switching Characteristics ◽  
Sputtering System

Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

2016 ◽  
Vol 30 (14) ◽  
pp. 1650141 ◽  
Author(s):  
Lujun Wei ◽  
Bai Sun ◽  
Wenxi Zhao ◽  
Hongwei Li ◽  
Xiangjiang Jia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Resistive Switching Memory ◽  
Good Repeatability ◽  
Nanoscale Structure ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Sputtering System

Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.

Characteristics of SnOx-Coated Lithium Manganese Oxide Thin Film for MEMS Power System

2005 ◽  
Vol 486-487 ◽  
pp. 562-565
Author(s):  
Jae Ho Lee ◽  
Young Jae Kim ◽  
Hee Soo Moon ◽  
Jong Wan Park
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Spinel Phase ◽  
Interface Reaction ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Spinel Type ◽  
System A ◽  
Layer Thin Film ◽  
Sputtering System

We prepared spinel-phase LiMn2O4 layer by using rf magnetron sputtering system. LiMn2O4 films were deposited at room temperature and then annealed at 750°C for crystallization to spinel type. In order to reduce the interface reaction such as Mn dissolution phenomenon during operation, we introduced SnOx (coating-layer) thin film. The SnOx films were deposited on LiMn2O4 films by rf magnetron sputtering system. A SnOx-coated LiMn2O4 film was more stable during the chargingdischarging reaction and maintained good cycle behavior at high temperature conditions of 55°C.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System
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