Titanium Oxide-Based Photocatalysts: -From Fundamentals to Practical Applications-

2006 ◽  
Vol 510-511 ◽  
pp. 5-8
Author(s):  
Koichiro Tsujimaru ◽  
Masakazu Anpo
Keyword(s):  
Titanium Oxide ◽  
Metal Ion ◽  
Tio2 Thin Film ◽  
Ion Beam ◽  
Physical Method ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Practical Applications ◽  
Highly Dispersed ◽  
Beam Utilization

Advanced ion-beam techniques such as metal ion-implantation and RF magnetron sputtering deposition were successfully applied in the development of titanium oxide photocatalysts capable of absorbing and working under both UV and visible light irradiation. This advanced physical method was found to be one of the most promising approaches to preparation of highly functional second-generation titanium oxide-based photocatalytic materials, TiO2 nano-powders, highly dispersed titanium oxide species within zeolite frameworks, and TiO2 thin film systems with efficient solar beam utilization of up to 20-30 %.

Growth of highly oriented La0.84Sr0.16MnO3 perovskite films

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Tunneling Microscopy ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposited Films

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.

The Preparation of Visible Light-Responsive TiO2 Thin Films by Applying a RF-Magnetron Sputtering Deposition Method and Their Photocatalytic Reactivity for the Decomposition of Water with a Separate Evolution of H2 and O2

2006 ◽  
Vol 317-318 ◽  
pp. 823-826 ◽  
Author(s):  
Masaaki Kitano ◽  
Hisashi Kikuchi ◽  
Takahiro Hosoda ◽  
Masato Takeuchi ◽  
Masaya Matsuoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Visible Light ◽  
Tio2 Thin Film ◽  
Rf Magnetron Sputtering ◽  
Light Irradiation ◽  
Deposition Method ◽  
Sputtering Deposition ◽  
Magnetron Sputtering Deposition Method

TiO2 (Vis-TiO2) thin films absorbing UV and visible light in regions of 250-600nm have been successfully developed by applying a radio-frequency (RF) magnetron sputtering deposition method. SIMS depth profiles of Vis-TiO2 revealed that the O/Ti ratio gradually decreases from the top surface (O/Ti ratio : 2.00 ± 0.01) to the inside (1.93 ± 0.01). This unique declined O/Ti composition (anisotropic structure) may be the origin of the significant perturbation in the electronic structure of Vis-TiO2, enabling the absorption of visible light and their high photocatalytic performance under visible light irradiation. In fact, it was found that the separate evolution of H2 and O2 from water could be successfully achieved under visible light or solar light irradiation by applying these thin film photocatalysts in an H-type glass container separating the two aqueous solutions by a TiO2 thin film and proton-exchange membrane, having H2 evolution from Pt side and O2 evolution from TiO2 thin film side, respectively.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

DEPOSITION OF SINGLE-PHASE CuInSe2 THIN FILMS UNDER LOW VACUUM LEVEL BY A TWO-STAGE GROWTH TECHNIQUE

2009 ◽  
Vol 16 (03) ◽  
pp. 381-386 ◽  
Author(s):  
J. B. CHU ◽  
H. B. ZHU ◽  
Z. A. WANG ◽  
Z. Q. BIAN ◽  
Z. SUN ◽  
...  
Keyword(s):  
Solar Cells ◽  
Single Phase ◽  
Low Cost ◽  
Control Process ◽  
Rf Magnetron Sputtering ◽  
Chalcopyrite Structure ◽  
Sputtering Deposition ◽  
Vacuum Level ◽  
X Ray ◽  
High Efficient

Single-phase CuInSe 2 films were grown by high vapor selenization of CuIn alloy precursors within a partially closed graphite box. The CuIn precursors were prepared using Cu x In y alloy targets with different composition rates under low vacuum level by a homemade sputtering system. The Cu and In composition rates of the used targets are 11:9, 10:10, and 9:11, respectively. The metallic precursor films were selenized using a two-step temperature profile, i.e. at 250°C and 400–500°C, respectively. The influence of the temperature at the second selenization step on the quality of the CIS absorbing layers was investigated. The CIS films were characterized by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis, and Raman spectroscopy. The deposited CIS absorbers selenized at a high temperature of 500°C for 30 min exhibited a single-phase chalcopyrite structure with a preferential orientation in the (112) direction. These layers display uniform, large, and densely packed crystals with a grain size of about 3–5 μm. Cadmium sulfide buffer layer was manufactured by chemical bath deposition method. Bilayers ZnO / ZnO : Al were prepared by RF magnetron sputtering deposition. CIS solar cells with an efficiency of about 6.5% were produced without antireflective films. The method to fabricate CIS solar cells by a combination of the low vacuum sputtering deposition and the graphite box selenization process has provided a simple control process and shown a promising potential for developing high efficient and low-cost CuInSe 2 solar cells.

Sign in / Sign up

Export Citation Format

Share Document