Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

A Novel Technique of Device Measurement after Cross-Sectional FIB in Failure Analysis

2009 ◽  
Author(s):  
Chih-Chung Chang ◽  
Jian-Chang Lin ◽  
Wen-Sheng Wu ◽  
Chih-Ying Tasi ◽  
Ching-Lin Chang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
Cross Sectional ◽  
Root Cause ◽  
Novel Technique ◽  
Atomic Force ◽  
Dual Beam ◽  
Transmission Electron ◽  
Failure Site

Abstract A dual beam FIB (Focused Ion Beam) system which provides the ion beam (i-beam) and electron beam (e-beam) function are widely used in semiconductor manufacture for construction analysis and failure cause identification. Although FIB is useful for defect or structure inspection, sometimes, it is still difficult to diagnose the root cause via FIB e-beam image due to resolution limitation especially in products using nano meter scale processes. This restriction will deeply impact the FA analysts for worst site or real failure site judgment. The insufficient e-beam resolution can be overcome by advanced TEM (Transmission Electron Microscope) technology, but how can we know if this suspected failure site is a real killer or not when looking at the insufficient e-beam images inside a dual beam tool? Therefore, a novel technique of device measurement by using C-AFM (Conductive Atomic Force Microscope) or Nano-Probing system after cross-sectional (X-S) FIB inspection has been developed based on this requirement. This newly developed technology provides a good chance for the FA analysts to have a device characteristic study before TEM sample preparation. If there is any device characteristic shift by electrical measurement, the following TEM image should show a solid process abnormality with very high confidence. Oppositely, if no device characteristic shift can be measured, FIB milling is suggested to find the real fail site instead of trying TEM inspection directly.

FIB/SEM Dual Beam Instrumentation: Slicing, Dicing, Imaging, and More

2001 ◽  
Vol 7 (S2) ◽  
pp. 796-797
Author(s):  
Lucille A. Giannuzzi
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Time Frame ◽  
Ion Source ◽  
Beam Diameter ◽  
Dual Beam ◽  
Beam Currents

In a focused ion beam (FIB) instrument, ions (typically Ga+) obtained from a liquid metal ion source are accelerated down a column at energies up to ∽ 50 keV. The beam of ions is focused by electrostatic and octopole lens systems and the ion dose (and beam diameter) is controlled using real and/or virtual apertures. Beam sizes in FIB instruments on the order of 5-7 nm may be achieved.The versatility of the FIB instrument enables large regions of material (e.g., 500 μm3) to be removed at high beam currents in just a couple of minutes. Lower beam currents (i.e., beam diameters) are usually used to remove smaller amounts of material within the same time frame (e.g., ∽ 5μm3). The introduction of an organometallic gas in close proximity to the target allows for the deposition of metals, SiO2, and other materials, by an ion beam assisted chemical vapor deposition process.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

High Energy Focused Ion Beam Nanoprobes: Design and Applications

2005 ◽  
Vol 908 ◽  
Author(s):  
Gary A. Glass ◽  
Bibhudutta Rout ◽  
Alexander D. Dymnikov ◽  
Elia V. Eschenazi ◽  
Richard Greco ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Complete System ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
System Technology ◽  
Independent Research ◽  
Coordinated Development ◽  
Component Systems ◽  
Research Facilities

AbstractAn overview of the present state of high energy focused ion beam (HEFIB) system technology, nanoprobe system design and specific ion beam writing applications will be presented. In particular, the combination of P-beam, heavy-ion writing and ion implantation to produce microstructures in resists and silicon will be demonstrated.Heretofore, the development of HEFIB technology worldwide has progressed through a series of developments at independent research facilities, each having relatively narrow and mostly isolated, research purposes. However, a complete, versatile HEFIB nanoprobe system capable of both analysis and modification will require the combination of several component systems, each with specialized technology, and significant advances in the design of a complete system can only be expected from an effort that includes a coordinated development of the component parts.

Dual Beam Focused Ion Beam and Transmission Electron Microscopies of Nanoscale Sectioned Diatom Frustules

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
T Gutu ◽  
J Wu ◽  
C Jeffreys ◽  
C-H Chang ◽  
G Rorrer ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Microscopies ◽  
Dual Beam ◽  
Transmission Electron

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

2005 ◽  
Vol 864 ◽  
Author(s):  
Bentao Cui ◽  
P. I. Cohen ◽  
A. M. Dabiran
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Surface Relaxation ◽  
Surface Roughening ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Continuum Equation ◽  
Argon Ions ◽  
Nanoscale Patterns

AbatractThe formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

scholarly journals Assessment of wear micromechanisms on a laser textured cemented carbide tool during abrasive-like machining by FIB/FESEM

Friction ◽  
2020 ◽  
Author(s):  
Shiqi Fang ◽  
Dirk Bähre ◽  
Luis Llanes
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Local Level ◽  
Surface Texturing ◽  
Laser Surface ◽  
Laser Surface Texturing ◽  
Near Surface ◽  
Dual Beam ◽  
Cemented Carbide Tool ◽  
Microstructural Integrity

Abstract The combined use of focused ion beam (FIB) milling and field-emission scanning electron microscopy inspection (FESEM) is a unique and successful approach for assessment of near-surface phenomena at specific and selected locations. In this study, a FIB/FESEM dual-beam platform was implemented to docment and analyze the wear micromechanisms on a laser-surface textured (LST) hardmetal (HM) tool. In particular, changes in surface and microstructural integrity of the laser-sculptured pyramids (effective cutting microfeatures) were characterized after testing the LST-HM tool against a steel workpiece in a workbench designed to simulate an external honing process. It was demonstrated that: (1) laser-surface texturing does not degrade the intrinsic surface integrity and tool effectiveness of HM pyramids; and (2) there exists a correlation between the wear and loading of shaped pyramids at the local level. Hence, the enhanced performance of the laser-textured tool should consider the pyramid geometry aspects rather than the microstructure assemblage of the HM grade used, at least for attempted abrasive applications.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

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