Influence of the Crystallographic Orientation on the Mechanical Behaviour of Sputtered Silver Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 1140-1144 ◽  
Author(s):  
Ana P. Piedade ◽  
Guenis Gomez ◽  
M. Teresa Vieira ◽  
Mariana Staia
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Mechanical Behaviour ◽  
Crystallographic Orientation ◽  
Research Work ◽  
Deposition Parameters ◽  
Modified Surfaces ◽  
Silver Thin Films ◽  
Discharge Gas ◽  
Wear Tests

In this research work, sputtering was used to deposit silver thin films under different deposition parameters, namely by changing deposition pressure, substrate bias and discharge gas. The main objective of the present work was to study the influence of the textured grain in the mechanical behaviour of the modified surfaces. The deposition rate, chemical composition (EPMA), morphology (SEM) and hardness were also assessed. In the slide alternating wear tests, where poly(tetrafluoroethylene) (PTFE) was used as counterbody, the loads varied from 10 to 30 N. One of the major conclusions of this work is that the thin films with the strongest (111) preferential crystallographic orientation correspond to the highest deposition rate. These sample present higher hardness and lower wear coefficient if compared with other orientations

scholarly journals Surface roughness minimum: Ag thin layer deposited on a glass

2001 ◽  
Vol 66 (7) ◽  
pp. 483-490 ◽  
Author(s):  
R. Petrovic ◽  
S. Strbac ◽  
N. Bundaleski ◽  
Z. Rakocevic
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Thin Layer ◽  
Layer Thickness ◽  
Deposition Rate ◽  
Turning Point ◽  
Deposition Time ◽  
Substrate Surface ◽  
Deposition Process ◽  
Silver Thin Films

In this paper the results of an examination of the surface roughness and morphology dependence of silver thin films up to 100 nm thick deposited on a microscope glass on the deposition rate and on the deposition time are presented. It was found that, for a constant deposition rate, the surface roughness exhibits minimum at a certain layer thickness. This coincides with the turning point when the influence of the substrate surface on the deposition process becomes negligible, i.e., to the change in the nature of the system substrate/deposit from Ag/glass to Ag/Ag. For a constant layer thickness, sthe surface roughness minimum, achieved at a certain deposition rate, coincides to the turning point when the average free path for vertical adatom mobility becomes zero.

Analysis of Tungsten-Alumina Nanocomposite Thin Films on SS304 Substrate

2021 ◽  
Vol 903 ◽  
pp. 125-132
Author(s):  
T.R. Mohan Kumar ◽  
P.V. Srihari ◽  
Sahas ◽  
M.S. Krupashankara
Keyword(s):  
Thin Films ◽  
Process Parameters ◽  
Gas Flow ◽  
Composite Coatings ◽  
Research Work ◽  
Substrate Material ◽  
Key Factors ◽  
Solar Absorptance ◽  
Thermal Emittance ◽  
Deposition Parameters

Higher solar absorptance and lower thermal emittance are the key factors for solar collectors. The use of thin films that are having mechanically resistant coatings are common practice in industries. The primary motivation of carrying this research work is to lower thermal emittance and maximize solar absorptance on SS304 substrate material. W-Al2O3 composite coatings are developed using magnetron sputtering process by considering the process parameters. The experimental plan is achieved based on Taguchi L9 orthogonal under various levels for deposition parameters. The tungsten and alumina thin films deposited using a co-sputtering were characterized using 410 - solar instrument for measuring solar absorptance and ET 100 Emissometer for measuring thermal emittance. The optimization for process parameters on thermal emittance and absorptance were carried out. It was found that for deposition parameters of DC power 750W, RF power 1050W and Argon gas flow rate of 250 sccm, absorptance of 0.758 with thermal emittance of 0.061 is observed with deposition was carried out on SS304 substrates.

The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

2017 ◽  
Vol 1143 ◽  
pp. 227-232
Author(s):  
Elena Emanuela Herbei ◽  
Michael P.M. Jank ◽  
Susanne Oertel ◽  
Laurentiu Frangu ◽  
Viorica Mușat
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Pmma Film ◽  
Pmma Layer ◽  
Deposition Parameters ◽  
Dielectric Performance

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

SILICON THIN FILMS PREPARED BY PECVD USING VHF POWER IN A CIRCULAR-PARALLEL-PLATE PLASMA REACTOR

2010 ◽  
Vol 24 (22) ◽  
pp. 4209-4216 ◽  
Author(s):  
SHUTANG WEN ◽  
YU MIAO ◽  
YUNHUI WANG ◽  
LIWEI ZHANG ◽  
JINGXIAO LU ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Plasma Reactor ◽  
Excitation Frequency ◽  
Pulse Frequency ◽  
Pulsed Power ◽  
Silicon Thin Films ◽  
Deposition Parameters ◽  
Si Films ◽  
Highly Uniform

The deposition rate of μc-Si films was investigated for four excitation frequencies 30, 40, 60, 70 and 80 MHz with other deposition parameters fixed. Deposition rate increases with the increasing of excitation frequency, while Raman crystallinity behaves more complicated. With the optimization of deposition parameters, p-i-n solar cells at an initial efficiency of 5.41% were fabricated. With the increasing of plasma excitation frequency, the non-uniformity of these thin films increases. To better understand the cause of the non-uniformity of these films, a numerical simulation was carried out. The numerical results generally followed the experimental data. It turned out that the standing waves and the evanescent wave guide modes on the electrode surface played an important role. In order to achieve highly uniform thin films, a triode-electrode was employed together with a pulsed power source. We found that with a proper choice of pulse frequency and DC voltage applied to the mesh, non-uniformity is less than 8% for films deposited on 10×10 cm 2 substrates. Simulations were also applied to analyze the results.

scholarly journals E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 870
Author(s):  
Nursultan Kainbayev ◽  
Mantas Sriubas ◽  
Kristina Bockute ◽  
Darius Virbukas ◽  
Giedrius Laukaitis
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Photoelectron Spectroscopy ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Deposition Parameters ◽  
High Concentrations

Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam evaporation, and the effects of deposition parameters on the structure and chemical composition were investigated. The analysis of thin films was carried out using Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-Ray Diffraction Analysis (XRD) and Raman spectroscopy methods. It was found that the chemical composition of ScAlSZ thin films was different from the chemical composition of the initial powder. Moreover, the Al concentration in thin films depends on the deposition rate, resulting in a lower concentration using a higher deposition rate. XPS analysis revealed that ZrOx, oxygen vacancies, high concentrations of Al2O3 and metallic Al exist in thin films and influence their structural properties. The crystallinity is higher when the concentration of Al is lower (higher deposition rate) and at higher substrate temperatures. Further, the amount of cubic phase is higher and the amount of tetragonal phase lower when using a higher deposition rate.

Optical Properties and Structures of Silver Thin Films Deposited by Thermal Evaporation with Different Deposition Rate

2010 ◽  
Vol 30 (1) ◽  
pp. 283-286 ◽  
Author(s):  
卢宝文 Lu Baowen ◽  
徐学科 Xu Xueke ◽  
余祥 Yu Xiang ◽  
范正修 Fan Zhengxiu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Deposition Rate ◽  
Thermal Evaporation ◽  
Silver Thin Films

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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