SiC Smart Power JFET Technology for High-Temperature Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1207-1210 ◽  
Author(s):  
Igor Sankin ◽  
V. Bondarenko ◽  
Robin L. Kelley ◽  
Jeff B. Casady
Keyword(s):  
High Temperature ◽  
Logic Gates ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Switch ◽  
Radiation Resistant ◽  
On Chip ◽  
And Control

Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

scholarly journals Fast cut-off, low I2T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

2021 ◽  
pp. 114240
Author(s):  
Amirouche Oumaziz ◽  
Emmanuel Sarraute ◽  
Frédéric Richardeau ◽  
Abdelhakim Bourennane ◽  
Céline Combettes ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Substrate ◽  
Power Switch ◽  
Embedded Power ◽  
On Chip ◽  
Fail Safe

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection

2012 ◽  
Vol E95.C (7) ◽  
pp. 1244-1251 ◽  
Author(s):  
Koji TAKEDA ◽  
Tomonari SATO ◽  
Takaaki KAKITSUKA ◽  
Akihiko SHINYA ◽  
Kengo NOZAKI ◽  
...  
Keyword(s):  
High Temperature ◽  
Photonic Crystal ◽  
Optical Interconnection ◽  
On Chip ◽  
High Temperature Operation

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

A Novel Two-phase Soft Starter Used for Three-phase Asynchronous Motors

2020 ◽  
Vol 13 (8) ◽  
pp. 1175-1182
Author(s):  
Jingwen Chen ◽  
Hongshe Dang
Keyword(s):  
Pulse Generation ◽  
Power Module ◽  
Two Phase ◽  
Power Semiconductor ◽  
Starting Current ◽  
Semiconductor Switches ◽  
Soft Starter ◽  
Three Phase ◽  
And Control ◽  
Driving Circuit

Background: Traditional thyristor-based three-phase soft starters of induction motor often suffer from high starting current and heavy harmonics. Moreover, both the trigger pulse generation and driving circuit design are usually complicated. Methods: To address these issues, we propose a novel soft starter structure using fully controlled IGBTs in this paper. Compared to approaches of traditional design, this structure only uses twophase as the input, and each phase is controlled by a power module that is composed of one IGBT and four diodes. Results: Consequently, both driving circuit and control design are greatly simplified due to the requirement of fewer controlled power semiconductor switches, which leads to the reduction of the total cost. Conclusion: Both Matlab/Simulink simulation results and experimental results on a prototype demonstrate that the proposed soft starter can achieve better performances than traditional thyristorbased soft starters for Starting Current (RMS) and harmonics.

scholarly journals Facile fabrication of graphene-based high-performance microsupercapacitors operating at high temperature of 150 oC

2021 ◽  
Author(s):  
Viktoriia Mishukova ◽  
Nicolas Boulanger ◽  
Artem Iakunkov ◽  
Szymon Sollami Delekta ◽  
Xiaodong Zhuang ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Storage ◽  
High Performance ◽  
Electronic Circuits ◽  
Industry Applications ◽  
Facile Fabrication ◽  
On Chip

Many industry applications require electronic circuits and systems to operate at high temperature over 150 oC. Although planar microsupercapacitors (MSCs) have great potential for miniaturized on-chip integrated energy storage components,...

A soft-error-immune 0.9-ns 1.15-Mb ECL-CMOS SRAM with 30-ps 120 k logic gates and on-chip test circuitry

1996 ◽  
Vol 31 (10) ◽  
pp. 1443-1450 ◽  
Author(s):  
K. Higeta ◽  
M. Usami ◽  
M. Ohayashi ◽  
Y. Fujimura ◽  
M. Nishiyama ◽  
...  
Keyword(s):  
Logic Gates ◽  
Soft Error ◽  
On Chip
Sign in / Sign up

Export Citation Format

Share Document