Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 497-500 ◽  
Author(s):  
Sung Wook Huh ◽  
A.Y. Polyakov ◽  
Hun Jae Chung ◽  
Saurav Nigam ◽  
Marek Skowronski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Bulk Crystals ◽  
Native Defects ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000 oC and 2100 oC. Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

Growth of Thick Ge Epilayers on Si(100) Substrates Utilizing Two-Step Approach by Ultrahigh Vacuum Chemical Vapor Deposition

2013 ◽  
Vol 860-863 ◽  
pp. 890-893
Author(s):  
Zhi Wen Zhou ◽  
Yue Zhong Zhang ◽  
Xiao Xia Shen
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Compressive Strain ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Threading Dislocation

Ge epilayers on low temperature (LT) Ge buffer layers were grown by ultrahigh vacuum chemical vapor deposition using the two-step approach. Effects of the growth temperature and the thickness of the low temperature Ge buffers were studied. It was demonstrated that it was unable to obtain flat LT Ge buffers just through lowering the growth temperature due to the ultraslow grow rate that 3D islands formation couldnt be prohibited. However, the rough LT Ge surface was smoothed by subsequent growth at elevated temperature if the LT Ge layer was thick enough and the compressive strain was relaxed largely, and the detrimental Si-Ge intermixing was effectively prohibited as well. When using proper growth conditions for the low temperature Ge buffer, thick Ge epilayer with a low threading dislocation density and a smooth surface was obtained.

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Residual impurities and native defects in 6H‐SiC bulk crystals grown by halide chemical-vapor deposition

2006 ◽  
Vol 99 (1) ◽  
pp. 013508 ◽  
Author(s):  
S. W. Huh ◽  
H. J. Chung ◽  
S. Nigam ◽  
A. Y. Polyakov ◽  
Q. Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bulk Crystals ◽  
Native Defects ◽  
Residual Impurities

scholarly journals Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 609 ◽  
Author(s):  
Jinlan Li ◽  
Chenxu Meng ◽  
Le Yu ◽  
Yun Li ◽  
Feng Yan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Device Performance ◽  
Deep Level Defect ◽  
Ultraviolet Photodetectors

In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers.

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

2014 ◽  
Vol 778-780 ◽  
pp. 261-264 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Svetlana Beljakowa ◽  
Kassem Alassaad ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Extended Defects ◽  
Enhanced Mobility ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
Equal Compensation ◽  
Homoepitaxial Layers

We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.

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