Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
2007 ◽
Vol 556-557
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pp. 235-238
Keyword(s):
X Ray
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A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps before and after final chemical-mechanical polish. After final polish, the wafers were also investigated with atomic force microscopy, radius of curvature measurements and cross-polarization (x-pol) mapping. It was found that there was largely a lack of correlation between the XRD and x-pol maps, which strongly suggests that x-pol is insensitive to crystalline imperfections to which XRD is sensitive.