scholarly journals Probing the Room Temperature Deuterium Absorption Kinetics in Nanoscale Magnesium Based Hydrogen Storage Multilayers Using Neutron Reflectometry, X-ray Diffraction, and Atomic Force Microscopy

2012 ◽  
Vol 116 (9) ◽  
pp. 5868-5880 ◽  
Author(s):  
W.P. Kalisvaart ◽  
E.J. Luber ◽  
E. Poirier ◽  
C.T. Harrower ◽  
A. Teichert ◽  
...  
1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.


1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.


1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.


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