Transmission Electron Microscopy Studies of Oxidation of Single Crystal Silicon Carbide at High Temperature

2007 ◽  
Vol 561-565 ◽  
pp. 2135-2138
Author(s):  
Bralee Chayasombat ◽  
N. Tarumi ◽  
T. Kato ◽  
Tsukasa Hirayama ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Amorphous Silica ◽  
Single Crystal Silicon ◽  
Mechanical Polishing ◽  
Oxide Scales ◽  
Oxidation Condition ◽  
Crystal Silicon ◽  
Transmission Electron

The microstructures of high-temperature oxide scales on the Si-terminated surface and C-terminated surface of 6H-SiC were investigated by transmission electron microscopy (TEM). We found that mechanical polishing caused surface strains, about 100 nm in depth, on both sides of specimens. Mechanically polished specimens were oxidized at 1473 K for 20 h in air. Oxide scales of about 250 nm in thickness were formed on the Si-terminated surface and of about 400 nm on the C-terminated surface. Since the strain regions caused by mechanical polishing were oxidized, strains were no longer observed. As a result, this oxidation condition effectively removed the strains. The oxide scales were identified as amorphous silica on the Si-terminated face, while crystalline oxides and amorphous silica were observed on the C-terminated face.

Epitaxial Silicon on Yttria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface

1984 ◽  
Vol 37 ◽  
Author(s):  
L. M. Mercandalli ◽  
D. Pribat ◽  
M. Dupuy ◽  
C. Arnodo ◽  
D. Rondi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Techniques

Astract(100) single crystal silicon films have been deposited onto (100) oriented Yttria-Stabilized Zirconia (YSZ) substrates by pyrolysis of SiH4 at ∼ 980°C.The as deposited epitaxial silicon films have been characterized by Reflexion High Energy Electron Diffraction and Transmission Electron Microscopy techniques.The as deposited silicon films have also been oxidized by oxygen transport through the substrate, resulting in a Si(100)/ amorphous SiO2/YSZ(100) structure in which the most defective part of the epitaxial silicon deposit has been eliminated. The oxidized interfaces (with SiO2 thicknesses in the 2000 Å range) have then been characterized by Transmission Electron Microscopy in order to assess the improvement in crystalline quality. Electrical measurements have also been performed on MOS-Hall bar structures.

Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Libera ◽  
A. Quintero
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface Roughness ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Transmission Electron

AbstractWe have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

Effect of Coupled Conditions of Thermal Cycle and Dump Environment on Conductivity of 5mol% Yttria Stabilized Zirconia

2013 ◽  
Vol 591 ◽  
pp. 245-248 ◽  
Author(s):  
Jin Feng Xia ◽  
Hong Qiang Nian ◽  
Tao Feng ◽  
Hai Fang Xu ◽  
Dan Yu Jiang
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Thermal Cycle ◽  
Oxygen Sensor ◽  
Yttria Stabilized Zirconia ◽  
Cyclic Change ◽  
Stabilized Zirconia ◽  
Transmission Electron

In some applications such as automotive oxygen sensor, 5mol% Y2O3stabilized zirconia (5YSZ) is generally used because it has both excellent ionic conductivity and mechanical properties. The automotive oxygen sensor would experience a cyclic change from high temperature (engine running) environment to the low temperature damp environment (in the tail pipe when vehicle stops). The conductivity change with coupled conditions of thermal cycle and dump environment in the 5mol%Y2O3ZrO2(5YSZ) system was examined by XRD,Impedance spectroscopy and transmission electron microscopy (SEM) in this paper.

In Situ High-Temperature Transmission Electron Microscopy Observations of the Formation of Nanocrystalline TiC from Nanocrystalline Anatase (TiO2)

1998 ◽  
Vol 4 (3) ◽  
pp. 269-277 ◽  
Author(s):  
A. Agrawal ◽  
J. Cizeron ◽  
V.L. Colvin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Solid Phase ◽  
Anatase Phase ◽  
High Resolution Electron Microscopy ◽  
Rutile Phase ◽  
Transmission Electron ◽  
New Phase

In this work, the high-temperature behavior of nanocrystalline TiO2 is studied using in situ transmission electron microscopy (TEM). These nanoparticles are made using wet chemical techniques that generate the anatase phase of TiO2 with average grain sizes of 6 nm. X-ray diffraction studies of nanophase TiO2 indicate the material undergoes a solid-solid phase transformation to the stable rutile phase between 600° and 900°C. This phase transition is not observed in the TEM samples, which remain anatase up to temperatures as high as 1000°C. Above 1000°C, nanoparticles become mobile on the amorphous carbon grid and by 1300°C, all anatase diffraction is lost and larger (50 nm) single crystals of a new phase are present. This new phase is identified as TiC both from high-resolution electron microscopy after heat treatment and electron diffraction collected during in situ heating experiments. Video images of the particle motion in situ show the nanoparticles diffusing and interacting with the underlying grid material as the reaction from TiO2 to TiC proceeds.

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

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