Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Libera ◽  
A. Quintero
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface Roughness ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Transmission Electron

AbstractWe have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

Epitaxial Silicon on Yttria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface

1984 ◽  
Vol 37 ◽  
Author(s):  
L. M. Mercandalli ◽  
D. Pribat ◽  
M. Dupuy ◽  
C. Arnodo ◽  
D. Rondi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Techniques

Astract(100) single crystal silicon films have been deposited onto (100) oriented Yttria-Stabilized Zirconia (YSZ) substrates by pyrolysis of SiH4 at ∼ 980°C.The as deposited epitaxial silicon films have been characterized by Reflexion High Energy Electron Diffraction and Transmission Electron Microscopy techniques.The as deposited silicon films have also been oxidized by oxygen transport through the substrate, resulting in a Si(100)/ amorphous SiO2/YSZ(100) structure in which the most defective part of the epitaxial silicon deposit has been eliminated. The oxidized interfaces (with SiO2 thicknesses in the 2000 Å range) have then been characterized by Transmission Electron Microscopy in order to assess the improvement in crystalline quality. Electrical measurements have also been performed on MOS-Hall bar structures.

Transmission Electron Microscopy Studies of Oxidation of Single Crystal Silicon Carbide at High Temperature

2007 ◽  
Vol 561-565 ◽  
pp. 2135-2138
Author(s):  
Bralee Chayasombat ◽  
N. Tarumi ◽  
T. Kato ◽  
Tsukasa Hirayama ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Amorphous Silica ◽  
Single Crystal Silicon ◽  
Mechanical Polishing ◽  
Oxide Scales ◽  
Oxidation Condition ◽  
Crystal Silicon ◽  
Transmission Electron

The microstructures of high-temperature oxide scales on the Si-terminated surface and C-terminated surface of 6H-SiC were investigated by transmission electron microscopy (TEM). We found that mechanical polishing caused surface strains, about 100 nm in depth, on both sides of specimens. Mechanically polished specimens were oxidized at 1473 K for 20 h in air. Oxide scales of about 250 nm in thickness were formed on the Si-terminated surface and of about 400 nm on the C-terminated surface. Since the strain regions caused by mechanical polishing were oxidized, strains were no longer observed. As a result, this oxidation condition effectively removed the strains. The oxide scales were identified as amorphous silica on the Si-terminated face, while crystalline oxides and amorphous silica were observed on the C-terminated face.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Scanning and transmission electron microscopies of single-crystal silicon microworn/machined using atomic force microscopy

1997 ◽  
Vol 12 (12) ◽  
pp. 3219-3224 ◽  
Author(s):  
Vilas N. Koinkar ◽  
Bharat Bhushan
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plan View ◽  
Force Microscopy ◽  
Electron Microscopies ◽  
Atomic Force ◽  
Transmission Electron

Atomic force microscopy (AFM) is commonly used for microwear/machining studies of materials at very light loads. To understand material removal mechanism on the microscale, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies were conducted on the microworn/machined single-crystal silicon. SEM studies of micromachined single-crystal silicon indicate that at light loads material is removed by ploughing. Fine particulate debris is observed at light loads. At higher loads, cutting type and ribbon-like debris were observed. This debris is loose and can be easily removed by scanning with an AFM tip. TEM images of a wear mark generated at 40 μN show bend contours in and around the wear mark, suggesting that there are residual stresses. Dislocations, cracks, or any special features were not observed inside or outside wear marks using plan-view TEM. Therefore, material is mostly removed in a brittle manner or by chipping without major dislocation activity, crack formation, and phase transformation at the surface. However, presence of ribbon-like debris suggests some plastic deformation as well.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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