Reactive DC Magnetron Sputtering of Vanadium Oxide Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 343-347 ◽  
Author(s):  
C. Batista ◽  
J. Mendes ◽  
Vasco Teixeira ◽  
Joaquim Carneiro
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Single Phase ◽  
Oxide Films ◽  
Wide Field ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

Vanadium oxides are a class of materials with outstanding physical and chemical properties. They find a wide field of technological applications such as optical and electrical switching devices, light detectors, temperature sensors, micro batteries, etc. There are several studies regarding the production of vanadium oxide films by radio-frequency (RF) magnetron sputtering, and with increasing interest on the thermochromic VO2 phase. However, literature with focus on vanadium oxide films deposited by direct current (DC) magnetron sputtering is very limited. In this work, we have successfully deposited vanadium oxide thin films by reactive DC magnetron sputtering under several processing conditions. The effect of substrate type, temperature, and O2/Ar flow ratio on phase formation has been studied. Structural analysis and phase determination have been carried out by X-ray diffractometry (XRD). Some single phase samples were also analysed with respect to surface morphology by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thermochromic behaviour of single phase VO2(M) films has been evaluated by optical spectrophotometry.

scholarly journals The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

Molecules ◽  
2020 ◽  
Vol 26 (1) ◽  
pp. 118
Author(s):  
Roman V. Tominov ◽  
Zakhar E. Vakulov ◽  
Vadim I. Avilov ◽  
Daniil A. Khakhulin ◽  
Nikita V. Polupanov ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Growth Parameters ◽  
Oxide Films ◽  
Laser Pulses ◽  
Oxide Thin Films ◽  
Deposition Parameters ◽  
Neuromorphic Systems ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

Vanadium oxide thin films prepared by RF magnetron sputtering method

2004 ◽  
Author(s):  
Zhishuan Li ◽  
Suntao Wu ◽  
Jing Li ◽  
Donghui Guo ◽  
Fuchun Xu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

2006 ◽  
Vol 497 (1-2) ◽  
pp. 267-269 ◽  
Author(s):  
Sihai Chen ◽  
Hong Ma ◽  
Shuangbao Wang ◽  
Nan Shen ◽  
Jing Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Silicon Dioxide ◽  
Vanadium Oxide ◽  
Buffer Layers ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Synthesis and Electrical Resistance Property of Vanadium Oxide Thin Films by DC Magnetron Sputtering

2020 ◽  
Vol 998 ◽  
pp. 185-190
Author(s):  
Ladawan Chotirat ◽  
Sutham Niyomwas ◽  
Sitthisuntorn Supothina ◽  
Witthawat Wongpisan ◽  
Kirati Waree
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Electrical Resistance ◽  
Base Pressure ◽  
Dc Magnetron Sputtering ◽  
Heating And Cooling ◽  
Resistance Property ◽  
Vanadium Oxide Thin Films

Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Process parameters including temperature, argon and oxygen ratio (Ar:O2) and base pressure were investigated. It was found that the control of sputtering base pressure is very important in realizing the pure VO2 (M) thin films. These thin films have grown at low base pressure of 5x10-6 mbar. The results of the valence electron analysis show the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The hysteresis loop of electrical resistance property of the VO2 thin films illustrated the quality of film, which is related to metal-insulator transition phase (MIT) at the transition temperature (Tc) of approximately 63°C. The sample was tested for its electrical properties by a four-probe setup with a temperature controller during heating and cooling cycles.

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