Self-Heating of 4H-SiC PiN Diodes at High Current Densities

2008 ◽  
Vol 600-603 ◽  
pp. 1007-1010
Author(s):  
Michael E. Levinshtein ◽  
Tigran T. Mnatsakanov ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Current Density ◽  
Dynamic Instability ◽  
Single Pulse ◽  
Pin Diodes ◽  
Current Time ◽  
Self Heating ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
A Current

Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal model was used to calculate non-isothermal current-voltage characteristics at dc and current-time dependences at pulsed measurements. The dynamic instability of N-type was observed: the current decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2. Comparison of experimental data and simulations showed that the local temperature in the diode base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

scholarly journals Na channel distribution in vertebrate skeletal muscle.

1986 ◽  
Vol 87 (6) ◽  
pp. 907-932 ◽  
Author(s):  
J H Caldwell ◽  
D T Campbell ◽  
K G Beam
Keyword(s):  
Skeletal Muscle ◽  
Current Density ◽  
Sharp Decrease ◽  
Na Channel ◽  
Na Current ◽  
Na Currents ◽  
Current Densities ◽  
Kinetics Of ◽  
A Current ◽  
Vertebrate Skeletal Muscle

The loose patch voltage clamp has been used to map Na current density along the length of snake and rat skeletal muscle fibers. Na currents have been recorded from (a) endplate membrane exposed by removal of the nerve terminal, (b) membrane near the endplate, (c) extrajunctional membrane far from both the endplate and the tendon, and (d) membrane near the tendon. Na current densities recorded directly on the endplate were extremely high, exceeding 400 mA/cm2 in some patches. The membrane adjacent to the endplate has a current density about fivefold lower than that of the endplate, but about fivefold higher than the membrane 100-200 micron from the endplate. Small local variations in Na current density are recorded in extrajunctional membrane. A sharp decrease in Na current density occurs over the last few hundred micrometers from the tendon. We tested the ability of tetrodotoxin to block Na current in regions close to and far from the endplate and found no evidence for toxin-resistant channels in either region. There was also no obvious difference in the kinetics of Na current in the two regions. On the basis of the Na current densities measured with the loose patch clamp, we conclude that Na channels are abundant in the endplate and near-endplate membrane and are sparse close to the tendon. The current density at the endplate is two to three orders of magnitude higher than at the tendon.

Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

1988 ◽  
Vol 31 (6) ◽  
pp. 1101-1104 ◽  
Author(s):  
L.A. Delimova ◽  
Yu.V. Zhilyaev ◽  
V.Yu. Kachorovsky ◽  
M.E. Levinshtein ◽  
V.V. Rossin
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Power Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

2000 ◽  
Vol 338-342 ◽  
pp. 1319-1322
Author(s):  
N.V. Dyakonova ◽  
Pavel A. Ivanov ◽  
V.A. Kozlov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 1010-1013 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Maria A. Kuznetsova ◽  
...  
Keyword(s):  
Field Emission ◽  
Wide Bandgap ◽  
Voltage Characteristic ◽  
Vacuum Field ◽  
Current Voltage ◽  
Capacitor Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Manufacturing Methods ◽  
Diode Current

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

Quantum-Cross Tunneling Junction for High Density Memory

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi
Keyword(s):  
Transport Properties ◽  
Barrier Height ◽  
Current Density ◽  
Tunnel Barrier ◽  
Ribbon Thickness ◽  
Barrier Thickness ◽  
Current Voltage ◽  
Thick Barrier ◽  
Current Voltage Characteristics ◽  
Interesting Behavior

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

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