Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD

2008 ◽  
Vol 600-603 ◽  
pp. 235-238
Author(s):  
Hideki Shimizu ◽  
Akira Kato
Keyword(s):  
Surface Roughness ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Sic Film ◽  
Reflection Electron Diffraction

In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. Nearly single-crystalline 3C-SiC film grew under the ratio of the flow rate of C3H8 to the flow rate of SiH4 (C/Si) of 2 - 2.5. From these results, it is suggested that C/Si shifts into higher with decreasing the substrate temperature. The crystallinity has been investigated by a reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

2009 ◽  
Vol 615-617 ◽  
pp. 161-164 ◽  
Author(s):  
Hideki Shimizu ◽  
Akira Kato
Keyword(s):  
Surface Roughness ◽  
Substrate Temperature ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
Temperature Growth ◽  
X Ray ◽  
Oriented Polycrystalline ◽  
Hydrogen Radicals ◽  
Sic Film ◽  
Reflection Electron Diffraction

In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 850 °C. Oriented polycrystalline 3C-SiC film grew under the C/Si of 3 – 5 with a-C. It is suggested that etching effects of growing surface by hydrogen radicals generated from C3H8 decomposition is lowered by lowering the substrate temperature. The crystallinity has been investigated by reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD

2007 ◽  
Vol 556-557 ◽  
pp. 183-186 ◽  
Author(s):  
Hideki Shimizu ◽  
Akira Kato
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
High Flow ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Film ◽  
Reflection Electron Diffraction ◽  
Lower Substrate Temperature

The effects of C3H8 on the microstructures of the films on Si (111) have been investigated by changing the concentration of C3H8 from 0.5% to 5%. 3C-SiC film on Si (111) grown at the C3H8 concentration of 1% with relatively high flow rate of SiH4 (30 sccm) is single crystal and free from the contamination of W2C. By comparing the deposition rates of the films on Si (111) and Si (100) at different concentrations of C3H8, SiC growth on Si (111) is much more dependent on C3H8 concentration than that on Si (100). From these results it is suggested that SiC growth on Si (111) is strongly influenced by hydrogen radicals generated from C3H8 decomposition by the plasma and forms single crystal easier than on Si(100). It is expected that 3C-SiC epitaxial growth on Si (111) has higher deposition rate and lower substrate temperature than on Si (100). The crystallinity has been investigated by a reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.

Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

2012 ◽  
Vol 717-720 ◽  
pp. 181-184
Author(s):  
Hideki Shimizu ◽  
Takashi Watanabe
Keyword(s):  
Substrate Temperature ◽  
Flow Rate ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Sic Film ◽  
Sic Films

To demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystalline quality of the 3C-SiC films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. The crystalline quality has been investigated by transmission electron microscope and X-ray diffraction. 3C-SiC is epitaxially grown on Si(111) and the 3C-SiC films are in either near single crystalline or highly oriented form with stacking faults and twin. It is expected that the film with good crystalline quality may grow at around 2.5 in the ratio of the flow rate of C3H8 to SiH4 and any microstructures of 3C-SiC films on Si (111) can be controlled by accurately controlling the ratio of C/Si.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Reflection Electron Diffraction of Catalase

1975 ◽  
Vol 33 ◽  
pp. 672-673
Author(s):  
T. K. Chatterjee ◽  
J. A. Spadaro ◽  
R. W. Vook
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Preliminary Report ◽  
Water Vapor Pressure ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns ◽  
Reflection Electron Diffraction

Matricardi et al. have shown that high energy electron diffraction patterns of unstained and unfixed catalase may be obtained with a high voltage TEM using a hydration stage and that without such a stage TED patterns could not be obtained. They showed that such patterns were observed only when the water vapor pressure in the vicinity of the catalase was greater than 90 percent of the equilibrium value. They attributed their results to the destruction of the crystallinity of catalase when it is vacuum dried. Similar results using X-ray diffraction techniques have been reported. Matricardi et al. also noted effects due to radiation damage, whereby the number of reflections observed using the hydration stage decreased substantially with electron beam exposure. In the present preliminary report, it is shown that electron diffraction patterns can be obtained from unstained and unfixed catalase even when the crystals are exposed directly to the vacuum of the TEM but under such conditions whereby the electron beam intensity is reduced by up to approximately two orders of magnitude from that usually obtained in normal TED work on a TEM.

Glycerol Conformation and the Crystal Structure of Lipids II. A Further Study of Tripalmitin and Conformationally Fixed Analogs by Small-Angle X-Ray Diffraction and Reflection Electron Diffraction

1978 ◽  
Vol 33 (1-2) ◽  
pp. 50-55 ◽  
Author(s):  
Douglas L. Dorset ◽  
Walter A. Pangborn ◽  
Anthony J. Hancock ◽  
Ton C. van Soest ◽  
S. M. Greenwald
Keyword(s):  
Crystal Structure ◽  
Electron Diffraction ◽  
Ab Initio ◽  
Crystal Structure Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cyclopentane Ring ◽  
Structure Determinations ◽  
A Chain ◽  
Reflection Electron Diffraction

Abstract The utility of analogs to glycerol-containing lipids based on the configurational isomers of cyclo-pentane-1,2,3-triol for ab initio crystal structure analysis via electron diffraction is assessed further. Such analogs of tripalmitin are examined with the natural triglyceride via low angle X-ray diffraction. The 1,3/2 (all-trans) and 1,2/3 (cis-trans) analogs give long spacing dimensions some 23 Å greater than found for the β-2 form of the natural compound, consistent with the long spacing observed for a β-3 form. The 1,2,3/0 (all-cis) analog gives a long spacing near that of the a-form of the triglyceride. Reflection electron diffraction measurements on the 1,3/2 and 1,2/3 analogs reveal a chain tilt near 60° for both and untilted chains for 1,2,3/0. A more accurate tilt determination from X-ray long spacings of the homologous series of 1,3/2 pseudotrilaurin to 1,3/2 pseudo-tripalmitin confirm the 67° tilt expected for the β-3 form. Therefore, given the same T,, methylene subcell, the molecular packing is very close to natural triglycerides. The subtle influences of the cyclopentane ring are overcome for 1,3/2 analogs based on stearic and arachidic acids. This emphasizes the utility of these structural analogs for ab initio crystal structure determinations of glycerol containing lipids.

Bimolecular and Monomolecular Lipid Films: Selected Area Electron Diffraction

1969 ◽  
Vol 27 ◽  
pp. 338-339
Author(s):  
Robert M. Glaeser ◽  
David W. Deamer
Keyword(s):  
Electron Diffraction ◽  
Membrane Structure ◽  
Molecular Organization ◽  
Membrane Material ◽  
X Ray Diffraction ◽  
Membrane Systems ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Lipid Films ◽  
Ultimate Objective

In the investigation of the molecular organization of cell membranes it is often supposed that lipid molecules are arranged in a bimolecular film. X-ray diffraction data obtained in a direction perpendicular to the plane of suitably layered membrane systems have generally been interpreted in accord with such a model of the membrane structure. The present studies were begun in order to determine whether selected area electron diffraction would provide a tool of sufficient sensitivity to permit investigation of the degree of intermolecular order within lipid films. The ultimate objective would then be to apply the method to single fragments of cell membrane material in order to obtain data complementary to the transverse data obtainable by x-ray diffraction.

Isomorphous replacement in electron diffraction of wet crystals of rat hemoglobin

1983 ◽  
Vol 41 ◽  
pp. 446-447
Author(s):  
William F. Tivol ◽  
Murray Vernon King ◽  
D. F. Parsons
Keyword(s):  
Electron Diffraction ◽  
Heavy Atom ◽  
Isomorphous Substitution ◽  
X Ray Diffraction ◽  
Salt Solutions ◽  
X Ray ◽  
Isomorphous Replacement ◽  
Structure Factors ◽  
Diffraction Structure ◽  
The Mean

Feasibility of isomorphous substitution in electron diffraction is supported by a calculation of the mean alteration of the electron-diffraction structure factors for hemoglobin crystals caused by substituting two mercury atoms per molecule, following Green, Ingram & Perutz, but with allowance for the proportionality of f to Z3/4 for electron diffraction. This yields a mean net change in F of 12.5%, as contrasted with 22.8% for x-ray diffraction.Use of the hydration chamber in electron diffraction opens prospects for examining many proteins that yield only very thin crystals not suitable for x-ray diffraction. Examination in the wet state avoids treatments that could cause translocation of the heavy-atom labels or distortion of the crystal. Combined with low-fluence techniques, it enables study of the protein in a state as close to native as possible.We have undertaken a study of crystals of rat hemoglobin by electron diffraction in the wet state. Rat hemoglobin offers a certain advantage for hydration-chamber work over other hemoglobins in that it can be crystallized from distilled water instead of salt solutions.

Microstructure and crystal symmetry of Pb2Sr2(Y/Ca)Cu3O9−δ

1990 ◽  
Vol 48 (4) ◽  
pp. 64-65
Author(s):  
Y. P. Lin ◽  
J. S. Xue ◽  
J. E. Greedan
Keyword(s):  
Electron Diffraction ◽  
High Temperature Superconductors ◽  
Carbon Film ◽  
Basic Structure ◽  
Crystal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Space Groups ◽  
New Family ◽  
Convergent Beam

A new family of high temperature superconductors based on Pb2Sr2YCu3O9−δ has recently been reported. One method of improving Tc has been to replace Y partially with Ca. Although the basic structure of this type of superconductors is known, the detailed structure is still unclear, and various space groups has been proposed. In our work, crystals of Pb2Sr2YCu3O9−δ with dimensions up to 1 × 1 × 0.25.mm and with Tc of 84 K have been grown and their superconducting properties described. The defects and crystal symmetry have been investigated using electron microscopy performed on crushed crystals supported on a holey carbon film.Electron diffraction confirmed x-ray diffraction results which showed that the crystals are primitive orthorhombic with a=0.5383, b=0.5423 and c=1.5765 nm. Convergent Beam Electron Diffraction (CBED) patterns for the and axes are shown in Figs. 1 and 2 respectively.

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