SiC Polytype Stability Influenced by Ge Impurities

2008 ◽  
Vol 600-603 ◽  
pp. 533-536 ◽  
Author(s):  
Richard Nader ◽  
Michel Kazan ◽  
E. Moussaed ◽  
Charbel Zgheib ◽  
Bilal Nsouli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Effect Of Impurities ◽  
The Stability

In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperature, effect of impurities on surface diffusion, strain, and super-saturation conditions as solved by using SSMBE growth (Solid Source molecular beam epitaxy).

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Surface diffusion length of Ga adatoms on (1̄1̄1̄)B surfaces during molecular beam epitaxy

1994 ◽  
Vol 64 (9) ◽  
pp. 1123-1125 ◽  
Author(s):  
Y. Nomura ◽  
Y. Morishita ◽  
S. Goto ◽  
Y. Katayama ◽  
T. Isu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Diffusion Length

Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas
Keyword(s):  
Substrate Temperature ◽  
Temperature Effect ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Stability ◽  
Hydrogenated Amorphous

Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates

1997 ◽  
Vol 81 (11) ◽  
pp. 7273-7281 ◽  
Author(s):  
T. Takebe ◽  
M. Fujii ◽  
T. Yamamoto ◽  
K. Fujita ◽  
T. Watanabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Patterned Substrates
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