Substrate temperature effect on crystallographic quality and surface morphology of zinc sulfide films on (100)‐oriented silicon substrates by molecular‐beam epitaxy

1986 ◽  
Vol 60 (10) ◽  
pp. 3508-3511 ◽  
Author(s):  
Meiso Yokoyama ◽  
Ko‐ichi Kashiro ◽  
Shin‐ichi Ohta
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Zinc Sulfide ◽  
Molecular Beam ◽  
Silicon Substrates

SiC Polytype Stability Influenced by Ge Impurities

2008 ◽  
Vol 600-603 ◽  
pp. 533-536 ◽  
Author(s):  
Richard Nader ◽  
Michel Kazan ◽  
E. Moussaed ◽  
Charbel Zgheib ◽  
Bilal Nsouli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Surface Diffusion ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Effect Of Impurities ◽  
The Stability

In this paper we present a methodology to affect the stability of polytypes formation during heteroepitaxial growth of SiC on Si. This methodology is based on the investigation of growth related parameters. These parameters involve substrate temperature, effect of impurities on surface diffusion, strain, and super-saturation conditions as solved by using SSMBE growth (Solid Source molecular beam epitaxy).

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

2003 ◽  
Vol 93 (9) ◽  
pp. 5274-5281 ◽  
Author(s):  
Muhammad B. Haider ◽  
Costel Constantin ◽  
Hamad Al-Brithen ◽  
Haiqiang Yang ◽  
Eugen Trifan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Flux Ratio ◽  
N Flux
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