Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect

1983 ◽  
Vol 22 (Part 2, No. 3) ◽  
pp. L144-L146 ◽  
Author(s):  
Takafumi Yao ◽  
Mutsuo Ogura ◽  
Seiichi Matsuoka ◽  
Toshihide Morishita
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Effect ◽  
Molecular Beam ◽  
Photo Luminescence ◽  
Luminescence Properties ◽  
Znse Thin Films

scholarly journals Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 211 (2) ◽  
pp. 885-885
Author(s):  
K. Yoshino ◽  
Y. Nakagawa ◽  
A. Fukuyama ◽  
H. Yokoyama ◽  
K. Maeda ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Recombination ◽  
Znse Thin Films ◽  
P Type

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Luminescence Properties ◽  
High Quality ◽  
Film Composition ◽  
Exciton Emission ◽  
Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 210 (2) ◽  
pp. 491-495 ◽  
Author(s):  
K. Yoshino ◽  
Y. Nakagawa ◽  
A. Fukuyama ◽  
H. Yokoyama ◽  
K. Maeda ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Recombination ◽  
Znse Thin Films ◽  
P Type
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