C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes

2009 ◽  
Vol 615-617 ◽  
pp. 469-472
Author(s):  
Filippo Fabbri ◽  
Francesco Moscatelli ◽  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Anna Cavallini
Keyword(s):  
Depth Distribution ◽  
Minority Carrier ◽  
Deep Level ◽  
Forward Bias ◽  
Depth Range ◽  
Standard Configuration ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Graded Junction ◽  
Dlts Spectra

Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis.

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

2005 ◽  
Vol 483-485 ◽  
pp. 355-358 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Electric Fields ◽  
Electron Emission ◽  
Minority Carrier ◽  
Deep Level ◽  
Deep Trap ◽  
Dlts Spectrum ◽  
Carrier Traps ◽  
P Type ◽  
Two Peaks ◽  
Dlts Spectra

Midgap levels in 4H-SiC epilayers have been investigated by DLTS. The EH6/7 center (Ec-1.55 eV) is the dominant deep level as observed in DLTS spectra from n-type epilayers. The activation energy of EH6/7 center is unchanged regardless of applied electric fields, indicating that the charge state of EH6/7 center may be neutral after electron emission (acceptor-like). A DLTS spectrum for a p-type epilayer in the temperature range from 90 to 830 K is dominated by two peaks, D center and a deep trap at 1.49 eV from the valence band edge. Minority carrier traps have been also investigated by DLTS using pn diodes. Two minority carrier traps with activation energies of 1.0 eV and 1.43 eV have been detected.

Investigating Minority-Carrier Traps in p-type Cu(InGa)Se2 Using Deep Level Transient Spectroscopy

2005 ◽  
Vol 865 ◽  
Author(s):  
Steven W. Johnston ◽  
Jehad A. M. AbuShama ◽  
Rommel Noufi
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Thermionic Emission ◽  
Small Peak ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
And Shifts ◽  
P Type

AbstractMeasurements of p-type Cu(InGa)Se2 (CIGS) using deep-level transient spectroscopy (DLTS) show peaks associated with minority-carrier traps, even though data were collected using reverse bias conditions not favorable to injecting minority-carrier electrons. These DLTS peaks occur in the temperature range of 50 to 150 K for the rate windows used and correspond to electron traps having activation energies usually in the range of 0.1 to 0.2 eV for alloys of CIS, CGS, and CIGS. The peak values also depend on the number of traps filled. For short filling times of 10 μs to 100 μs, a small peak appears. As the DLTS filling pulse width increases, the peak increases in response to more traps being filled, but it also broadens and shifts to lower temperature suggesting that a possible series of trap levels, perhaps forming a defect band, are present. The peaks usually saturate in a timeframe of seconds. These filling times are sufficient for electrons to fill traps near the interface from the n-type side of the device due to a thermionic emission current. Admittance spectroscopy data for the same samples are shown for comparison.

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

2016 ◽  
Vol 858 ◽  
pp. 308-311 ◽  
Author(s):  
Giovanni Alfieri ◽  
Andrei Mihaila ◽  
Hussein M. Ayedh ◽  
Bengt Gunnar Svensson ◽  
Pavel Hazdra ◽  
...  
Keyword(s):  
Energy Range ◽  
Minority Carrier ◽  
Deep Level ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Minority Charge Carrier ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
The Impact

In this contribution, we report on the electrical characterization of point defects in 4H-SiC p+in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier traps, in the 0.1-1.7 eV energy range below the conduction band edge, and four were minority carrier traps located in the 0.13-0.4 eV energy range above the valence band edge. We found that, during DLTS measurements, both majority and minority carrier traps can be detected and we explain this by considering the behavior of the quasi-Fermi levels. At last, we studied the impact of proton irradiation on the minority charge carrier lifetime.

scholarly journals Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

2005 ◽  
Vol 891 ◽  
Author(s):  
Steven W. Johnston ◽  
Sarah R. Kurtz ◽  
Richard S. Crandall
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Organic Chemical ◽  
Conduction Band Offset ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For all samples, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.25 to 0.35 eV. The minority-carrier trap density in the p-type material is quantified based on computer simulation of the devices. The simulations show that only about 2% of the traps in the depleted layer are filled during the transient. The fraction of the traps that are filled depends strongly on the depth of the trap, but only weakly on the doping of the layers and on the conduction-band offset. The simulations provide a pathway to obtain semi-quantitative data for analysis of minority-carrier traps by DLTS.

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