Lifetime Investigations of 4H-SiC PiN Power Diodes

2009 ◽  
Vol 615-617 ◽  
pp. 699-702 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Wolfgang Bartsch ◽  
Bernd Zippelius ◽  
Gerhard Pensl
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Lifetime Measurements ◽  
Power Diodes ◽  
Defect Centers ◽  
Device Processing ◽  
Transient Spectroscopy ◽  
Base Range

Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 s to 2.1 s; these values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z1/2-center as a lifetime killer is discussed.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

1997 ◽  
Vol 162 (1) ◽  
pp. 199-225 ◽  
Author(s):  
T. Dalibor ◽  
G. Pensl ◽  
H. Matsunami ◽  
T. Kimoto ◽  
W. J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Defect ◽  
Defect Centers ◽  
Transient Spectroscopy

Defect States In p-ZnSe:N Grown By MOVPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Shizuo Fujita ◽  
Ken-Ichi Ogata ◽  
Daisuke Kawaguchi ◽  
Zhi Gang Peng ◽  
Shigeo Fujita
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Annealing Temperature ◽  
Deep Level ◽  
Defect States ◽  
Nitrogen Doped ◽  
Activation Efficiency ◽  
Transient Spectroscopy ◽  
P Type

AbstractConcentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

2011 ◽  
Vol 679-680 ◽  
pp. 409-412
Author(s):  
Pavel A. Ivanov ◽  
Oleg Korolkov ◽  
Tat'yana P. Samsonova ◽  
Natalja Sleptsuk ◽  
Alexander S. Potapov ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Dlts Spectra

In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.

Iron-Related Defect Centers in 3C-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 265-268 ◽  
Author(s):  
Thanos Tsirimpis ◽  
S. Beljakova ◽  
Bernd Zippelius ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Implantation Damage ◽  
Defect Centers ◽  
Related Defect ◽  
Transient Spectroscopy ◽  
P Type

p-type 3C-SiC samples were implanted by iron (Fe) and investigated by means of deep level transient spectroscopy (DLTS). Corresponding argon (Ar) profiles with similar implantation damage were implanted in order to distinguish between iron-related defects and defects caused by implantation damage. Two donor-like iron-related centers were identified in p-type 3C-SiC.

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 419-422
Author(s):  
Fei Yan ◽  
Robert P. Devaty ◽  
Wolfgang J. Choyke ◽  
Katsunori Danno ◽  
Giovanni Alfieri ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ground State ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Separate Paper ◽  
Defect Centers ◽  
Thermal Histories ◽  
Transient Spectroscopy ◽  
P Type ◽  
Low Temperature Photoluminescence

In this paper we describe an effort to find correlations between low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS) of electron irradiated samples annealed from 25 °C to 1700 °C in 100 °C steps. We report on thermal histories of defect centers created by 170 keV and 1 MeV electron irradiation, as observed by LTPL only. The DLTS results on "twin" samples are presented in a separate paper. Our results indicate that in n-type 4H SiC there is no correlation between the Z1/Z2 center in DLTS and the L1 peak of the DI center seen in LTPL. In p-type 4H SiC we do not find a correlation between a 350 meV DLTS peak above the valence band and the LTPL L1 peak of the DI center. Consequently, we cannot find evidence for a 350 meV ground state postulated in the “Pseudo–Donor” model [3].

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 423-426 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Systematic Study ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

AbstractThe deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec-Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3-4×1014cm−3 and a capture cross section of ∼1-5×10−15cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et-Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Sign in / Sign up

Export Citation Format

Share Document