DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions

2011 ◽  
Vol 679-680 ◽  
pp. 409-412
Author(s):  
Pavel A. Ivanov ◽  
Oleg Korolkov ◽  
Tat'yana P. Samsonova ◽  
Natalja Sleptsuk ◽  
Alexander S. Potapov ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Dlts Spectra

In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

2012 ◽  
Vol 717-720 ◽  
pp. 251-254 ◽  
Author(s):  
Bernd Zippelius ◽  
Alexander Glas ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Double Peak ◽  
Carbon Vacancy ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6(EC- ET(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH6-center and the prominent acceptor-like Z1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7(EC- ET(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7double peak taking the previously determined parameters of EH6into account.

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

1998 ◽  
Vol 532 ◽  
Author(s):  
C. R. Cho ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
N. Yarykin ◽  
G. Rozgonyi ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Temperature Range ◽  
Type Silicon ◽  
Defect Annealing ◽  
Interstitial Defects ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTThe evolution of defects in Czochralski and epitaxial p- and n-type silicon wafers following irradiation with He. Si or Ge ions at 80 K has been investigated by in situ deep level transient spectroscopy (DLTS). Defect annealing and formation reactions have been observed over the temperature range 80–350 K. In p-type silicon, new species-dependent levels are observed immediately after implantation, but these levels anneal out at or below room temperature. The wellknown divacancy and interstitial defects, usually reported after room temperature implantation, are revealed in the DLTS spectra only upon annealing at 160–200 K. In n-type silicon, vacancy-oxygen pairs are observed immediately after implantation. However, vacancy-related defects continue to form over a broad temperature range in samples implanted with Si or Ge. These observations are consistent with a model whereby vacancies and interstitials are released from defect clusters at temperatures >200 K to form divacancies and other defect pairs which are stable at room temperature.

Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Shabih Fatima ◽  
Jennifer Wong-Leung ◽  
John Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Damage Evolution ◽  
Peak Concentration ◽  
Deep Level ◽  
Extended Defects ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

Lifetime Investigations of 4H-SiC PiN Power Diodes

2009 ◽  
Vol 615-617 ◽  
pp. 699-702 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Wolfgang Bartsch ◽  
Bernd Zippelius ◽  
Gerhard Pensl
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Lifetime Measurements ◽  
Power Diodes ◽  
Defect Centers ◽  
Device Processing ◽  
Transient Spectroscopy ◽  
Base Range

Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 s to 2.1 s; these values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z1/2-center as a lifetime killer is discussed.

Defects Induced by Reactive Ion Etching in Ge Substrate

2014 ◽  
Vol 896 ◽  
pp. 241-244
Author(s):  
Kusumandari ◽  
Noriyuki Taoka ◽  
Wakana Takeuchi ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Defect Formation ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
The Other ◽  
Ion Etching ◽  
Ar Plasma ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps ◽  
Dlts Spectra

We investigated impacts of the Ar and CF4　plasma during reactive ion etching (RIE) on defect formation in the Ge substrates using the deep-level-transient-spectroscopy (DLTS) technique. It was found that the Ar plasma causes the roughening of the Ge surface. Moreover, the Ar plasma induces a defect with an energy level of 0.31 eV from the conduction band minimum in the Ge substrate, confirming by DLTS spectra. On the other hand, the CF4plasma hardly induces the surface roughness of Ge. However, the CF4plasma induces many kinds of electron and hole traps. It should be noted that the defects associated with Sb and interstitials are widely distributed to around 3-µm.

Pressure-dependent DLTS Experiments on Si-DOPED AlGaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
John W. Farmer ◽  
Harold P. Hjalmarson ◽  
G. A. Samara
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Complex ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Si Doped ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Dlts Spectra

ABSTRACTPressure dependent Deep Level Transient Spectroscopy (DLTS) experiments are used to measure the properties of the deep donors (DX-centers) responsible for the persistent photoconductivity effect in Si-doped AlGaAs. The sample dependence of the DLTS spectra shows evidence for a defect complex involved in the DX-center.

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Open Physics ◽  
2011 ◽  
Vol 9 (1) ◽  
Author(s):  
Peter Hockicko ◽  
Peter Bury ◽  
Peter Sidor ◽  
Hikaru Kobayashi ◽  
Masao Takahashi ◽  
...  
Keyword(s):  
Deep Level ◽  
Annealing Treatment ◽  
Interface States ◽  
Acid Oxidation ◽  
Electrical Measurements ◽  
External Bias ◽  
Transient Spectroscopy ◽  
Mos Structures ◽  
Dlts Spectra

AbstractA set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 365-368 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Two Peaks ◽  
Dlts Spectra

The authors have investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by N+, P+, Al+ implantation, by deep level transient spectroscopy (DLTS). Ne+-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, Z1/2 (Ec – 0.63 eV) and EH6/7 (Ec – 1.6 eV) are dominant deep levels. When the implant dose is low, seven peaks (IN1, IN3 ~ IN6, IN8, IN9) have emerged by implantation and annealing at 1000oC in the DLTS spectra from all n-type samples. After high-temperature annealing at 1700oC, however, most DLTS peaks disappeared, and two peaks, Z1/2 and EH6/7 survive. In the p-type as-grown material, D center (Ev + 0.40 eV) and HK4 (Ev + 1.4 eV) are dominant. When the implant dose is low, two peaks (IP1, IP3) have emerged by implantation and annealing at 1000oC, and four traps IP2, IP4 (Ev + 0.72 eV), IP7 (Ev + 1.3 eV), and IP8 (Ev + 1.4 eV) are dominant after annealing at 1700oC.

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

2005 ◽  
Vol 483-485 ◽  
pp. 485-488 ◽  
Author(s):  
Alfonso Ruggiero ◽  
M. Zimbone ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Room Temperature Photoluminescence ◽  
Temperature Range ◽  
Defect Annealing ◽  
Luminescence Peak ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at Ec-0.43 eV (E1/E2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E1/E2 level is mainly responsible for the luminescence quenching after irradiation.

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